[1] |
Li Xu-Dong, Jiang Zeng-Gong, Gu Qiang, Zhang Meng, Lin Guo-Qiang, Zhao Ming-Hua, Guo Li.Cs-Te photocathode preparation with Te intermittent and Cs continuous deposition based on improved preparation success rate and quantum efficiency. Acta Physica Sinica, 2022, 71(17): 178501.doi:10.7498/aps.71.20220818 |
[2] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[3] |
Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
[4] |
Wang Peng, Guo Run-Da, Chen Yu, Yue Shou-Zhen, Zhao Yi, Liu Shi-Yong.Influence of gradient doping on photoelectric conversion efficiency of organic photovoltaic devices. Acta Physica Sinica, 2013, 62(8): 088801.doi:10.7498/aps.62.088801 |
[5] |
Liu Zhu, Zhao Zhi-Fei, Guo Hao-Min, Wang Yu-Qi.Band structure and optical absorption in InAs/GaSb quantum well. Acta Physica Sinica, 2012, 61(21): 217303.doi:10.7498/aps.61.217303 |
[6] |
Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun.Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica, 2012, 61(18): 187901.doi:10.7498/aps.61.187901 |
[7] |
Yan Xiong-Wei, Yu Hai-Wu, Zheng Jian-Gang, Li Ming-Zhong, Jiang Xin-Ying, Duan Wen-Tao, Cao Ding-Xiang, Wang Ming-Zhe, Shang Xiao-Tong, Zhang Yong-Liang.Thermal-management of grad-doping Yb ∶YAG repetitive-rate laser. Acta Physica Sinica, 2011, 60(4): 047801.doi:10.7498/aps.60.047801 |
[8] |
Lin Qi, Chen Yu-Hang, Wu Jian-Bao, Kong Zong-Min.Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons. Acta Physica Sinica, 2011, 60(9): 097103.doi:10.7498/aps.60.097103 |
[9] |
Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui.Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903.doi:10.7498/aps.60.017903 |
[10] |
Zhao Jing, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan, Zhang Jun-Ju, Shi Feng, Cheng Hong-Chang, Cui Dong-Xu.Research on quantum efficient fitting and structure of high performance transmission-mode GaAs photocathode. Acta Physica Sinica, 2011, 60(10): 107802.doi:10.7498/aps.60.107802 |
[11] |
Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Qiao Jian-Liang.Study of spectral response for transmission-modeNEA GaN photocathodes. Acta Physica Sinica, 2011, 60(5): 057902.doi:10.7498/aps.60.057902 |
[12] |
Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
[13] |
Zhou Hai-Liang, Chi Ya-Qing, Zhang Min-Xuan, Fang Liang.Performance optimization of carbon nanotube field effect transistors based on stair-case doping strategy. Acta Physica Sinica, 2010, 59(11): 8104-8112.doi:10.7498/aps.59.8104 |
[14] |
Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu.Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909.doi:10.7498/aps.59.8903 |
[15] |
Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun.Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859.doi:10.7498/aps.59.2855 |
[16] |
Zhou Mei, Zhao De-Gang.A new p-n structure ultraviolet photodetector with p--GaN active region. Acta Physica Sinica, 2009, 58(10): 7255-7260.doi:10.7498/aps.58.7255 |
[17] |
Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
[18] |
Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
[19] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
[20] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |