[1] |
Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong.Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica, 2024, 73(7): 077201.doi:10.7498/aps.73.20231677 |
[2] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
[3] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[4] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[5] |
Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong.Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103.doi:10.7498/aps.62.017103 |
[6] |
Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng.Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301.doi:10.7498/aps.62.217301 |
[7] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
[8] |
Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue.TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica, 2012, 61(18): 186103.doi:10.7498/aps.61.186103 |
[9] |
Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
[10] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
[11] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
[12] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
[13] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009.doi:10.7498/aps.59.5002 |
[14] |
Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
[15] |
Feng Qian, Hao Yue, Yue Yuan-Zheng.Study of AlGaN/GaN MOSHEMT device with Al2O3 insulating film. Acta Physica Sinica, 2008, 57(3): 1886-1890.doi:10.7498/aps.57.1886 |
[16] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
[17] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
[18] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai.Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981.doi:10.7498/aps.55.2977 |
[19] |
Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun.Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica, 2005, 54(9): 4329-4333.doi:10.7498/aps.54.4329 |
[20] |
Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |