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Xu Ting-Ting, Li Yi, Chen Pei-Zu, Jiang Wei, Wu Zheng-Yi, Liu Zhi-Min, Zhang Jiao, Fang Bao-Ying, Wang Xiao-Hua, Xiao Han.Infrared modulator based on AZO/VO2/AZO sandwiched structure due to electric field induced phase transition. Acta Physica Sinica, 2016, 65(24): 248102.doi:10.7498/aps.65.248102 |
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Hao Ru-Long, Li Yi, Liu Fei, Sun Yao, Tang Jia-Yin, Chen Pei-Zu, Jiang Wei, Wu Zheng-Yi, Xu Ting-Ting, Fang Bao-Ying, Wang Xiao-Hua, Xiao Han.Optical modulation characteristics of VO2 thin film due to electric field induced phase transition in the FTO/VO2/FTO structure. Acta Physica Sinica, 2015, 64(19): 198101.doi:10.7498/aps.64.198101 |
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Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102 |
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Fan Min-Min, Xu Jing-Ping, Liu Lu, Bai Yu-Rong, Huang Yong.Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET. Acta Physica Sinica, 2014, 63(8): 087301.doi:10.7498/aps.63.087301 |
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2013, 62(10): 108501.doi:10.7498/aps.62.108501 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu.Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(7): 077103.doi:10.7498/aps.62.077103 |
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Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101 |
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Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin.Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106.doi:10.7498/aps.60.077106 |
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Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong.Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502.doi:10.7498/aps.60.058502 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming.The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2009, 58(1): 494-497.doi:10.7498/aps.58.494 |
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong.2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2008, 57(6): 3807-3812.doi:10.7498/aps.57.3807 |
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Chen Hai-Feng, Hao Yue, Ma Xiao-Hua, Tang Yu, Meng Zhi-Qin, Cao Yan-Rong, Zhou Peng-Ju.Characteristics of degradation under GIDL stress in ultrathin gate oxide LDD nMOSFET’s. Acta Physica Sinica, 2007, 56(3): 1662-1667.doi:10.7498/aps.56.1662 |
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Zhang He-Ming, Cui Xiao-Ying, Hu Hui-Yong, Dai Xian-Ying, Xuan Rong-Xi.Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET. Acta Physica Sinica, 2007, 56(6): 3504-3508.doi:10.7498/aps.56.3504 |
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Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
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Zheng Zhong-Shan, Liu Zhong-Li, Zhang Guo-Qiang, Li Ning, Fan Kai, Zhang En-Xia, Yi Wan-Bing, Chen Meng, Wang Xi.Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET. Acta Physica Sinica, 2005, 54(1): 348-353.doi:10.7498/aps.54.348 |
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Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897 |
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SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA.ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408.doi:10.7498/aps.49.1404 |
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