[1] |
Jian Chao-Chao, Ma Xiang-Chao, Zhao Zi-Han, Zhang Jian-Qi.Temperature dependence of MXenes plasmons induced hot carrier generation and transport. Acta Physica Sinica, 2024, 73(11): 117801.doi:10.7498/aps.73.20231924 |
[2] |
Shu Pan-Pan, Zhao Peng-Cheng, Wang Rui.Electromagnetic particle simulation of secondary electron multipactor characteristics in inner surface of 110 GHz microwave output window. Acta Physica Sinica, 2023, 72(9): 095202.doi:10.7498/aps.72.20222235 |
[3] |
Zhang Cai-Xia, Ma Xiang-Chao, Zhang Jian-Qi.Theoretical study on surface plasmon and hot carrier transport properties of Au(111) films. Acta Physica Sinica, 2022, 71(22): 227801.doi:10.7498/aps.71.20221166 |
[4] |
Huang Hua, Wu Yang, Liu Zhen-Bang, Yuan Huan, He Hu, Li Le-Le, Li Zheng-Hong, Jin Xiao, Ma Hong-Ge.Review on high power microwave device with locked frequency and phase. Acta Physica Sinica, 2018, 67(8): 088402.doi:10.7498/aps.67.20172684 |
[5] |
Li Zhi-Gang, Cheng Li, Yuan Zhong-Cai, Wang Jia-Chun, Shi Jia-Ming.Avalanche effect in plasma under high-power microwave irradiation. Acta Physica Sinica, 2017, 66(19): 195202.doi:10.7498/aps.66.195202 |
[6] |
Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong.High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501.doi:10.7498/aps.65.168501 |
[7] |
Zhou Hang, Zheng Qi-Wen, Cui Jiang-Wei, Yu Xue-Feng, Guo Qi, Ren Di-Yuan, Yu De-Zhao, Su Dan-Dan.Enhanced channel hot carrier effect of 0.13 m silicon-on-insulator N metal-oxide-semiconductor field-effect transistor induced by total ionizing dose effect. Acta Physica Sinica, 2016, 65(9): 096104.doi:10.7498/aps.65.096104 |
[8] |
Tang Tao.Numerical validation study of high power microwave soil breakdown. Acta Physica Sinica, 2015, 64(4): 045203.doi:10.7498/aps.64.045203 |
[9] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong.A model of hot carrier gate current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2014, 63(19): 197103.doi:10.7498/aps.63.197103 |
[10] |
Wang Dong, Xu Sha, Cao Yan-Wei, Qin Fen.Design of a metallic photonic crystal high power microwave mode converter. Acta Physica Sinica, 2014, 63(1): 018401.doi:10.7498/aps.63.018401 |
[11] |
Song Wei, Shao Hao, Zhang Zhi-Qiang, Huang Hui-Jun, Li Jia-Wei, Wang Kang-Yi, Jing Hong, Liu Ying-Jun, Cui Xin-Hong.High power microwave propagation properties in radio frequency breakdown plasma. Acta Physica Sinica, 2014, 63(6): 064101.doi:10.7498/aps.63.064101 |
[12] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
[13] |
Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei.The damage effect and mechanism of the bipolar transistor induced by different types of high power microwaves. Acta Physica Sinica, 2013, 62(12): 128501.doi:10.7498/aps.62.128501 |
[14] |
Ma Zhen-Yang, Chai Chang-Chun, Ren Xing-Rong, Yang Yin-Tang, Chen Bin.The damage effect and mechanism of the bipolar transistor caused by microwaves. Acta Physica Sinica, 2012, 61(7): 078501.doi:10.7498/aps.61.078501 |
[15] |
Wu Yang, Xu Zhou, Xu Yong, Jin Xiao, Chang An-Bi, Li Zheng-Hong, Huang Hua, Liu Zhong, Luo Xiong, Ma Qiao-Sheng, Tang Chuan-Xiang.Experimental study on a high power microwave amplifier driven by low rf power. Acta Physica Sinica, 2011, 60(4): 044102.doi:10.7498/aps.60.044102 |
[16] |
Wang Gan-Ping, Xiang Fei, Tan Jie, Cao Shao-Yun, Luo Min, Kang Qiang, Chang An-Bi.Investigation in discharge progress of a long pulse high power microwave-driven source. Acta Physica Sinica, 2011, 60(7): 072901.doi:10.7498/aps.60.072901 |
[17] |
Cai Li-Bing, Wang Jian-Guo.Numerical simulation of the breakdown on HPM dielectric surface. Acta Physica Sinica, 2009, 58(5): 3268-3273.doi:10.7498/aps.58.3268 |
[18] |
Liu Yu-An, Du Lei, Bao Jun-Lin.Research on correlation of 1/fγ noise and hot carrier degradation in metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2008, 57(4): 2468-2475.doi:10.7498/aps.57.2468 |
[19] |
Li Zheng-Hong, Meng Fan-Bao, Chang An-Bi, Huang Hua, Ma Qiao-Sheng.Investigation of bitron as a high power microwave oscillator. Acta Physica Sinica, 2005, 54(8): 3578-3583.doi:10.7498/aps.54.3578 |
[20] |
REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |