[1] |
Wang Guo-Jian, Liu Yan-Wen, Li Fen, Tian Hong, Zhu Hong, Li Yun, Zhao Heng-Bang, Wang Xiao-Xia, Zhang Zhi-Qiang.Effect of ion-beam surface treatment on photocathode emission. Acta Physica Sinica, 2021, 70(21): 218503.doi:10.7498/aps.70.20210587 |
[2] |
Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
[3] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[4] |
Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing.Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica, 2017, 66(22): 227801.doi:10.7498/aps.66.227801 |
[5] |
Yang Yong-Fu, Fu Rong-Guo, Zhang Yi-Jun, Wang Xiao-Hui, Zou Ji-Jun.Effect of surface potential barrier on electron escape probability of GaN photocathode. Acta Physica Sinica, 2012, 61(6): 068501.doi:10.7498/aps.61.068501 |
[6] |
Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Qiao Jian-Liang.Study of spectral response for transmission-modeNEA GaN photocathodes. Acta Physica Sinica, 2011, 60(5): 057902.doi:10.7498/aps.60.057902 |
[7] |
Guo Xiang-Yang, Chang Ben-Kang, Wang Xiao-Hui, Zhang Yi-Jun, Yang Ming.Photoemission stability of negative electronaffinity GaN phtocathode. Acta Physica Sinica, 2011, 60(5): 058101.doi:10.7498/aps.60.058101 |
[8] |
Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui.Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903.doi:10.7498/aps.60.017903 |
[9] |
Niu Jun, Zhang Yi-Jun, Chang Ben-Kang, Xiong Ya-Juan.Evaluation of surface potential barriers after activation of GaAs photocathode. Acta Physica Sinica, 2011, 60(4): 044210.doi:10.7498/aps.60.044210 |
[10] |
Fu Xiao-Qian, Chang Ben-Kang, Li Biao, Wang Xiao-Hui, Qiao Jian-Liang.Comprehensive Survey for the Frontier Disciplines Progress of negative electron affinity GaN photocathode. Acta Physica Sinica, 2011, 60(3): 038503.doi:10.7498/aps.60.038503 |
[11] |
Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Du Xiao-Qing, Zhang Yi-Jun, Gao Pin, Wang Xiao-Hui, Guo Xiang-Yang, Niu Jun, Gao You-Tang.Study of spectral response characteristics of negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(5): 3577-3582.doi:10.7498/aps.59.3577 |
[12] |
Qiao Jian-Liang, Chang Ben-Kang, Du Xiao-Qing, Niu Jun, Zou Ji-Jun.Quantum efficiency decay mechanism for reflection-mode negative electron affinity GaN photocathode. Acta Physica Sinica, 2010, 59(4): 2855-2859.doi:10.7498/aps.59.2855 |
[13] |
Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue.The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica, 2009, 58(5): 3409-3415.doi:10.7498/aps.58.3409 |
[14] |
Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
[15] |
Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
[16] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
[17] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi, Gao Pin, Qiao Jian-Liang, Zeng Yi-Ping.Stability of GaAs photocathodes under different intensities of illumination. Acta Physica Sinica, 2007, 56(10): 6109-6113.doi:10.7498/aps.56.6109 |
[18] |
Zhang Kai-Xiao, Chen Dun-Jun, Shen Bo, Tao Ya-Qi, Wu Xiao-Shan, Xu Jin, Zhang Rong, Zheng You-Dou.The effects of passivation and temperature on the barrier strain of Al0.22Ga0.78N/GaN heterostructures. Acta Physica Sinica, 2006, 55(3): 1402-1406.doi:10.7498/aps.55.1402 |
[19] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
[20] |
Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |