[1] |
Cao Wen-Yu, Zhang Ya-Ting, Wei Yan-Feng, Zhu Li-Juan, Xu Ke, Yan Jia-Sheng, Zhou Shu-Xing, Hu Xiao-Dong.Strain modulation effect of superlattice interlayer on InGaN/GaN multiple quantum well. Acta Physica Sinica, 2024, 73(7): 077201.doi:10.7498/aps.73.20231677 |
[2] |
Tai Jian-Peng, Guo Wei-Ling, Li Meng-Mei, Deng Jie, Chen Jia-Xin.GaN based micro-light-emitting diode size effect and array display. Acta Physica Sinica, 2020, 69(17): 177301.doi:10.7498/aps.69.20200305 |
[3] |
Cheng Cheng, Wang Guo-Dong, Cheng Xiao-Yu.Effects of surface polarization on the bandgap and the absorption-peak wavelength of quantum dot at room temperature. Acta Physica Sinica, 2017, 66(13): 137802.doi:10.7498/aps.66.137802 |
[4] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[5] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
[6] |
Wu Hai-Na, Sun Xue, Gong Wei-Jiang, Yi Guang-Yu.Influences of electron-phonon interaction on the thermoelectric effect in a parallel double quantum dot system. Acta Physica Sinica, 2015, 64(7): 077301.doi:10.7498/aps.64.077301 |
[7] |
Gu Zhuo, Ban Shi-Liang.Size and ternary mixed crystal effects on interband absorption in wurtzite ZnO/MgxZn1-xO quantum wells. Acta Physica Sinica, 2014, 63(10): 107301.doi:10.7498/aps.63.107301 |
[8] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
[9] |
Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin.The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304.doi:10.7498/aps.62.117304 |
[10] |
Shen Man, Zhang Liang, Liu Jian-Jun.Effects of magneic field and quantum dot size on properties of exciton. Acta Physica Sinica, 2012, 61(21): 217103.doi:10.7498/aps.61.217103 |
[11] |
Wang Yan-Wen, Wu Hua-Rui.Exciton states and optical properties in zinc-blende GaN/AlGaN quantum dot. Acta Physica Sinica, 2012, 61(10): 106102.doi:10.7498/aps.61.106102 |
[12] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
[13] |
Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
[14] |
Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
[15] |
Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
[16] |
Li Gui-Qin, Cai Jun.The investigation of roughing effect sensitive to size in graphene quantum dot device. Acta Physica Sinica, 2009, 58(9): 6453-6458.doi:10.7498/aps.58.6453 |
[17] |
Shen Ye, Xing Huai-Zhong, Yu Jian-Guo, Lü Bin, Mao Hui-Bing, Wang Ji-Qing.Curie-temperature modulation by polarization-induced built-in electric fields in Mn δ-doped GaN/AlGaN quantum wells. Acta Physica Sinica, 2007, 56(6): 3453-3457.doi:10.7498/aps.56.3453 |
[18] |
Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
[19] |
Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai.Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981.doi:10.7498/aps.55.2977 |
[20] |
Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju.AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica, 2003, 52(12): 2985-2988.doi:10.7498/aps.52.2985 |