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Li Pei, Dong Zhi-Yong, Guo Hong-Xia, Zhang Feng-Qi, Guo Ya-Xin, Peng Zhi-Gang, He Chao-Hui.Investigation of laser-induced single event effect on SiGe BiCMOS low noise amplifiers. Acta Physica Sinica, 2024, 73(4): 044301.doi:10.7498/aps.73.20231451 |
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Yang Wei-Tao, Hu Zhi-Liang, He Huan, Mo Li-Hua, Zhao Xiao-Hong, Song Wu-Qing, Yi Tian-Cheng, Liang Tian-Jiao, He Chao-Hui, Li Yong-Hong, Wang Bin, Wu Long-Sheng, Liu Huan, Shi Guang.Neutron induced single event effects on near-memory computing architecture AI chips. Acta Physica Sinica, 2024, 73(13): 138502.doi:10.7498/aps.73.20240430 |
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Huang Xin-Yu, Zhang Jin-Xin, Wang Xin, Lü Ling, Guo Hong-Xia, Feng Juan, Yan Yun-Yi, Wang Hui, Qi Jun-Xiang.Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures. Acta Physica Sinica, 2024, 73(12): 126103.doi:10.7498/aps.73.20240307 |
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Jiang Xin-Shuai, Luo Yin-Hong, Zhao Wen, Zhang Feng-Qi, Wang Tan.Influences of well contact on multiple-cell upsets in 28 nm SRAM. Acta Physica Sinica, 2023, 72(3): 036101.doi:10.7498/aps.72.20221742 |
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Ju An-An, Guo Hong-Xia, Zhang Feng-Qi, Liu Ye, Zhong Xiang-Li, Ouyang Xiao-Ping, Ding Li-Li, Lu Chao, Zhang Hong, Feng Ya-Hui.Simulation research on single event effect of N-well resistor. Acta Physica Sinica, 2023, 72(2): 026102.doi:10.7498/aps.72.20220125 |
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Fu Jing, Cai Yu-Long, Li Yu-Dong, Feng Jie, Wen Lin, Zhou Dong, Guo Qi.Single event transient effect of frontside and backside illumination image sensors under proton irradiation. Acta Physica Sinica, 2022, 71(5): 054206.doi:10.7498/aps.71.20211838 |
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Shen Rui-Xiang, Zhang Hong, Song Hong-Jia, Hou Peng-Fei, Li Bo, Liao Min, Guo Hong-Xia, Wang Jin-Bin, Zhong Xiang-Li.Numerical simulation of single-event effects in fully-depleted silicon-on-insulator HfO2-based ferroelectric field-effect transistor memory cell. Acta Physica Sinica, 2022, 71(6): 068501.doi:10.7498/aps.71.20211655 |
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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Wang Xun, Zhang Feng-Qi, Chen Wei, Guo Xiao-Qiang, Ding Li-Li, Luo Yin-Hong.Application and evaluation of Chinese spallation neutron source in single-event effects testing. Acta Physica Sinica, 2019, 68(5): 052901.doi:10.7498/aps.68.20181843 |
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Gao Zhan-Zhan, Hou Peng-Fei, Guo Hong-Xia, Li Bo, Song Hong-Jia, Wang Jin-Bin, Zhong Xiang-Li.Temperature dependence of single-event transient response in devices with selective-buried-oxide structure. Acta Physica Sinica, 2019, 68(4): 048501.doi:10.7498/aps.68.20191932 |
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin.Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2015, 64(11): 118502.doi:10.7498/aps.64.118502 |
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Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
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Hu Hai-Fan, Wang Ying, Chen Jie, Zhao Shi-Bin.Full three-dimensional simulations of optimized active pixel detector for ionizing particle detection. Acta Physica Sinica, 2014, 63(10): 100702.doi:10.7498/aps.63.100702 |
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Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin.Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2014, 63(24): 248503.doi:10.7498/aps.63.248503 |
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Bi Jin-Shun, Liu Gang, Luo Jia-Jun, Han Zheng-Sheng.Numerical simulation of single-event-transient effects on ultra-thin-body fully-depleted silicon-on-insulator transistor based on 22 nm process node. Acta Physica Sinica, 2013, 62(20): 208501.doi:10.7498/aps.62.208501 |
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong.Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica, 2013, 62(19): 196104.doi:10.7498/aps.62.196104 |
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Liu Bi-Wei, Chen Jian-Jun, Chen Shu-Ming, Chi Ya-Qin.NPN bipolar effect and its influence on charge sharing in a tripe well CMOS technology with n+ deep well. Acta Physica Sinica, 2012, 61(9): 096102.doi:10.7498/aps.61.096102 |
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Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun.Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology. Acta Physica Sinica, 2011, 60(4): 046106.doi:10.7498/aps.60.046106 |
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Cai Ming-Hui, Han Jian-Wei, Li Xiao-Yin, Li Hong-Wei, Zhang Zhen-Li.A simulation study of the atmospheric neutron environment in near space. Acta Physica Sinica, 2009, 58(9): 6659-6664.doi:10.7498/aps.58.6659 |