[1] |
Zhu Wei-Jun, Chen Jin-Xin, Gao Yu-Han, Yang De-Ren, Ma Xiang-Yang.Electroluminescence from silicon-based light-emitting device with erbium-doped TiO2films: Enhancement effect of ytterbium codoping. Acta Physica Sinica, 2019, 68(12): 124204.doi:10.7498/aps.68.20190300 |
[2] |
Wu Yang, Chen Qi, Xu Rui-Ying, Ge Rui, Zhang Biao, Tao Xu, Tu Xue-Cou, Jia Xiao-Qing, Zhang La-Bao, Kang Lin, Wu Pei-Heng.Optical properties of niobium nitride nanowires. Acta Physica Sinica, 2018, 67(24): 248501.doi:10.7498/aps.67.20181646 |
[3] |
Wu Xue-Ke, Huang Wei-Qi, Dong Tai-Ge, Wang Gang, Liu Shi-Rong, Qin Chao-Jie.Effects of thermal annealing, laser and electron beam on the fabrication of nanosilicon and the emission properties of its localized states. Acta Physica Sinica, 2016, 65(10): 104202.doi:10.7498/aps.65.104202 |
[4] |
Yang Min-Yu, Song Jian-Jun, Zhang Jing, Tang Zhao-Huan, Zhang He-Ming, Hu Hui-Yong.Physical mechanism of uniaxial strain in nano-scale metal oxide semiconductor transistor caused by sin film. Acta Physica Sinica, 2015, 64(23): 238502.doi:10.7498/aps.64.238502 |
[5] |
Chen Zhan-Xu, Wan Wei, He Ying-Ji, Chen Geng-Yan, Chen Yong-Zhu.Light-extraction enhancement of GaN-based LEDs by closely-packed nanospheres monolayer. Acta Physica Sinica, 2015, 64(14): 148502.doi:10.7498/aps.64.148502 |
[6] |
Gao Song, Zhao Su-Ling, Xu Zheng, Yang Yi-Fan, Liu Zhi-Min, Xie Xiao-Yi.Near ultraviolet luminescence characteristics of ZnO nanoparticle film. Acta Physica Sinica, 2014, 63(15): 157702.doi:10.7498/aps.63.157702 |
[7] |
Jia He-Shun, Luo Lei, Li Bing-Lin, Xu Zhen-Hua, Ren Xian-Kun, Jiang Yan-Sen, Cheng Liang, Zhang Chun-Yan.Performance of polycrystal silicon color solar cells. Acta Physica Sinica, 2013, 62(16): 168802.doi:10.7498/aps.62.168802 |
[8] |
Huang Rui, Wang Dan-Qing, Song Jie, Ding Hong-Lin, Wang Xiang, Guo Yan-Qing, Chen Kun-Ji, Xu Jun, Li Wei, Ma Zhong-Yuan.Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer. Acta Physica Sinica, 2010, 59(8): 5823-5827.doi:10.7498/aps.59.5823 |
[9] |
Kan Peng-Zhi, Zhao Su-Ling, Xu Zheng, Kong Chao, Wang Da-Wei, Yan Yue.The applications of ZnO nanorods in poly [2-methoxy-5-(2-ethyl-hexyloxy)-1, 4-phenylene vinylene]solid state cathodoluminescence device. Acta Physica Sinica, 2010, 59(1): 616-619.doi:10.7498/aps.59.616 |
[10] |
Huang Rui, Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan.Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica, 2009, 58(3): 2072-2076.doi:10.7498/aps.58.2072 |
[11] |
Wang Yan-Xin, Zhang Qi-Feng, Sun Hui, Chang Yan-Ling, Wu Jin-Lei.Fabrication of ZnO nanowire-based diodes and their light-emitting properties. Acta Physica Sinica, 2008, 57(2): 1141-1144.doi:10.7498/aps.57.1141 |
[12] |
Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan.The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica, 2008, 57(12): 7860-7864.doi:10.7498/aps.57.7860 |
[13] |
Zhang Chao, Sun Jiu-Xun, Tian Rong-Gang, Zou Shi-Yong.Analytic equations of state and thermo-physical properties for the α, β, and γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5969-5973.doi:10.7498/aps.56.5969 |
[14] |
Sun Hui, Zhang Qi-Feng, Wu Jin-Lei.Ultraviolet light emitting diode based on ZnO nanowires. Acta Physica Sinica, 2007, 56(6): 3479-3482.doi:10.7498/aps.56.3479 |
[15] |
Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei.Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica, 2007, 56(4): 2399-2404.doi:10.7498/aps.56.2399 |
[16] |
Wang Jiu-Min, Chen Kun-Ji, Song Jie, Yu Lin-Wei, Wu Liang-Cai, Li Wei, Huang Xin-Fan.Double-level charge storage in self-aligned doubly-stacked Si nanocrystals in SiNx dielectric. Acta Physica Sinica, 2006, 55(11): 6080-6084.doi:10.7498/aps.55.6080 |
[17] |
Huang Kai, Wang Si-Hui, Shi Yi, Qin Guo-Yi, Zhang Rong, Zheng You-Dou.Effect of inner electric field on the photoluminescence spectrum of nanosilicon. Acta Physica Sinica, 2004, 53(4): 1236-1242.doi:10.7498/aps.53.1236 |
[18] |
YUAN FANG-CHENG, RAN GUANG-ZHAO, CHAN YUAN, ZHANG BO-RUI, QIAO YONG-PING, FU JI-SHI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ROOM-TEMPERATURE 1.54μm Er3+ PHOTOLUMINESCENCE FROM Er-DOPED SILICON-RICH SILICON OXIDE FILM GROWN BY MAGNETRON SPUTTERING. Acta Physica Sinica, 2001, 50(12): 2487-2491.doi:10.7498/aps.50.2487 |
[19] |
MA SHU-YI, QIN GUO-GANG, YOU LI-PING, WANG YIN-YUE.COMPARATIVE STUDY ON PHOTOLUMINESCENCE FROM Si-CONTAINING SILICON OXIDE FILMS AND Ge-CONTAINING SILICON OXIDE FILMS. Acta Physica Sinica, 2001, 50(8): 1580-1584.doi:10.7498/aps.50.1580 |
[20] |
SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA.ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408.doi:10.7498/aps.49.1404 |