[1] |
Ke Qing, Dai Yue-Hua.Kinetics study of ions in conductive filament growth process of electrochemical metallization resistive memory. Acta Physica Sinica, 2023, 72(24): 248501.doi:10.7498/aps.72.20231232 |
[2] |
Li Wei, Zhu Hui-Wen, Sun Tong, Qu Wen-Shan, Li Jian-Gang, Yang Hui, Gao Zhi-Xiang, Shi Wei, Wei Bin, Wang Hua.High endurance organic resistive switching memory based on 1, 2-dicyanobenzene and polymer composites. Acta Physica Sinica, 2023, 72(4): 048501.doi:10.7498/aps.72.20221507 |
[3] |
Wang Ying, Huang Hui-Xiang, Huang Xiang-Lin, Guo Ting-Ting.Resistive switching characteristics of HfOx-based resistance random access memory under photoelectric synergistic regulation. Acta Physica Sinica, 2023, 72(19): 197201.doi:10.7498/aps.72.20230797 |
[4] |
Zhou Zheng, Huang Peng, Kang Jin-Feng.Non-volatile memory based in-memory computing technology. Acta Physica Sinica, 2022, 71(14): 148507.doi:10.7498/aps.71.20220397 |
[5] |
Zhu Mao-Cong, Shao Ya-Jie, Zhou Jing, Chen Wen, Wang Zhi-Qing, Tian Jing.Resistive properties of CuInS2quantum dots regulated by niobium-doped lead zirconate titanate ferroelectric films. Acta Physica Sinica, 2022, 71(20): 207301.doi:10.7498/aps.71.20220911 |
[6] |
Gong Shao-Kang, Zhou Jing, Wang Zhi-Qing, Zhu Mao-Cong, Shen Jie, Wu Zhi, Chen Wen.Size-controlled resistive switching performance and regulation mechanism of SnO2QDs. Acta Physica Sinica, 2021, 70(19): 197301.doi:10.7498/aps.70.20210608 |
[7] |
Zeng Fan-Ju, Tan Yong-Qian, Tang Xiao-Sheng, Zhang Xiao-Mei, Yin Hai-Feng.Progress of lead-free perovskite and its resistance switching performance. Acta Physica Sinica, 2021, 70(15): 157301.doi:10.7498/aps.70.20210065 |
[8] |
Guo Jia-Jun, Dong Jing-Yu, Kang Xin, Chen Wei, Zhao Xu.Effect of transition metal element X (X=Mn, Fe, Co, and Ni) doping on performance of ZnO resistive memory. Acta Physica Sinica, 2018, 67(6): 063101.doi:10.7498/aps.67.20172459 |
[9] |
Zhang Zhi-Chao, Wang Fang, Wu Shi-Jian, Li Yi, Mi Wei, Zhao Jin-Shi, Zhang Kai-Liang.Influneces of different oxygen partial pressures on switching properties of Ni/HfOx/TiN resistive switching devices. Acta Physica Sinica, 2018, 67(5): 057301.doi:10.7498/aps.67.20172194 |
[10] |
Dai Yue-Hua, Pan Zhi-Yong, Chen Zhen, Wang Fei-Fei, Li Ning, Jin Bo, Li Xiao-Feng.Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study. Acta Physica Sinica, 2016, 65(7): 073101.doi:10.7498/aps.65.073101 |
[11] |
Jiang Ran, Du Xiang-Hao, Han Zu-Yin, Sun Wei-Deng.Cluster distribution for oxygen vacancy in Ti/HfO2/Pt resistive switching memory device. Acta Physica Sinica, 2015, 64(20): 207302.doi:10.7498/aps.64.207302 |
[12] |
Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang.Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301.doi:10.7498/aps.63.187301 |
[13] |
Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan.Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) films. Acta Physica Sinica, 2014, 63(16): 167201.doi:10.7498/aps.63.167201 |
[14] |
Wei Xiao-Ying, Hu Ming, Zhang Kai-Liang, Wang Fang, Liu Kai.Micro-structural and resistive switching properties of vanadium oxide thin films. Acta Physica Sinica, 2013, 62(4): 047201.doi:10.7498/aps.62.047201 |
[15] |
Rong Jia-Ling, Chen Yun-Han, Zhou Jie, Zhang Xue, Wang Li, Cao Jin.SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al. Acta Physica Sinica, 2013, 62(22): 228502.doi:10.7498/aps.62.228502 |
[16] |
Yang Jin, Zhou Mao-Xiu, Xu Tai-Long, Dai Yue-Hua, Wang Jia-Yu, Luo Jing, Xu Hui-Fang, Jiang Xian-Wei, Chen Jun-Ning.Composite interfaces and electrode properties of resistive random access memory devices. Acta Physica Sinica, 2013, 62(24): 248501.doi:10.7498/aps.62.248501 |
[17] |
Xie Zi-Jian, Hu Zuo-Qi, Wang Yu-Hui, Zhao Xu.Numerical simulation of RESET operation for multilevel storage in phase change memory cell. Acta Physica Sinica, 2012, 61(10): 100201.doi:10.7498/aps.61.100201 |
[18] |
Zhang Zu-Fa, Zhang Yin, Feng Jie, Cai Yan-Fei, Lin Yin-Yin, Cai Bing-Chu, Tang Ting-Ao, Chen Bomy.Study of Si-doped Sb2Te3 films for phase change memory. Acta Physica Sinica, 2007, 56(7): 4224-4228.doi:10.7498/aps.56.4224 |
[19] |
Lai Yun-Feng, Feng Jie, Qiao Bao-Wei, Ling Yun, Lin Yin-Yin, Tang Ting-Ao, Cai Bing-Chu, Chen Bang-Ming.Multiple-state storage capability of nitrogen-doped Ge2Sb2Te5 film for phase change memory. Acta Physica Sinica, 2006, 55(8): 4347-4352.doi:10.7498/aps.55.4347 |
[20] |
Sun Jin-Peng, Wang Tai-Hong.Coulomb blockade three-valued single-electron memory. Acta Physica Sinica, 2003, 52(10): 2563-2568.doi:10.7498/aps.52.2563 |