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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
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.Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211536 |
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Li Tian-Jing, Cao Xiu-Xia, Tang Shi-Hui, He Lin, Meng Chuan-Min.Crystal-orientation effects of the optical extinction in shocked Al2O3: a first-principles investigation. Acta Physica Sinica, 2020, 69(4): 046201.doi:10.7498/aps.69.20190955 |
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Wu Jia-Long, Dou Yong-Jiang, Zhang Jian-Feng, Wang Hao-Ran, Yang Xu-Yong.Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer. Acta Physica Sinica, 2020, 69(1): 018101.doi:10.7498/aps.69.20191269 |
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Qu Zi-Han, Chu Ze-Ma, Zhang Xing-Wang, You Jing-Bi.Research progress of efficient green perovskite light emitting diodes. Acta Physica Sinica, 2019, 68(15): 158504.doi:10.7498/aps.68.20190647 |
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Gao Si, Wang Zi-Han, Hua Jian-Guan, Li Qian-Kun, Li Ai-Wu, Yu Yan-Hao.Sub-diffraction-limit fabrication of sapphire by femtosecond laser direct writing. Acta Physica Sinica, 2017, 66(14): 147901.doi:10.7498/aps.66.147901 |
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Tang Shi-Hui, Cao Xiu-Xia, He Lin, Zhu Wen-Jun.Effects of vacancy point defects and phase transitions on optical properties of shocked Al2O3. Acta Physica Sinica, 2016, 65(14): 146201.doi:10.7498/aps.65.146201 |
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Pan Hui-Ping, Cheng Feng-Feng, Li Lin, Horng Ray-Hua, Yao Shu-De.Structrual analyses of Ga2+xO3-x thin films grown on sapphire substrates. Acta Physica Sinica, 2013, 62(4): 048801.doi:10.7498/aps.62.048801 |
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Song Yun-Fei, Yu Guo-Yang, Yin He-Dong, Zhang Ming-Fu, Liu Yu-Qiang, Yang Yan-Qiang.Temperature dependence of elastic modulus of single crystal sapphire investigated by laser ultrasonic. Acta Physica Sinica, 2012, 61(6): 064211.doi:10.7498/aps.61.064211 |
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing.Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica, 2012, 61(12): 127807.doi:10.7498/aps.61.127807 |
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Zhang Ning-Chao, Liu Fu-Sheng, Peng Xiao-Juan, Chen Yuan-Fu, Wang Jun-Guo, Zhang Ming-Jian, Xue Xue-Dong.Light emission mechanism of sapphire under shock loading from 40 to 60 GPa. Acta Physica Sinica, 2012, 61(22): 226501.doi:10.7498/aps.61.226501 |
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Xie Qing-Lian, Wang Zheng, Huang Guo-Hua, Wang Xiang-Hong, You Feng, Ji Lu, Zhao Xin-Jie, Fang Lan, Yan Shao-Lin.The in situ two-temperature process of preparation of CeO2 films on sapphire substrates and technical improvements of fabrication of Tl-2212 films. Acta Physica Sinica, 2009, 58(11): 7958-7965.doi:10.7498/aps.58.7958 |
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Lin Han, Liu Shou, Zhang Xiang-Su, Liu Bao-Lin, Ren Xue-Chang.Enhanced external quantum efficiency of light emitting diodes by fabricating two-dimensional photonic crystal sapphire substrate with holographic technique. Acta Physica Sinica, 2009, 58(2): 959-963.doi:10.7498/aps.58.959 |
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Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang He-Ming, Zhang Yu-Ming, Dai Xian-Ying, Hu Hui-Yong.3UCVD deposition SiO2 on SiC wafer and its C-V measurement. Acta Physica Sinica, 2004, 53(9): 3225-3228.doi:10.7498/aps.53.3225 |
[20] |
Wang Jian-Ping, Hao Yue, Peng Jun, Zhu Zuo-Yun, Zhang Yong-Hua.. Acta Physica Sinica, 2002, 51(8): 1793-1797.doi:10.7498/aps.51.1793 |