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Abstract

Gallium oxide (Ga2O3) thin films are deposited on silicon and quartz glass substrates by reactive DC magnetron sputtering under different oxygen pressure η (η =O2/[Ar+O2]), and the effect of oxygen pressure on the structure and optical band gap (Eg) is investigated. X-ray diffraction (XRD) and Raman scattering reveal that the products are beta-gallium oxide after heat treatment at 900 ℃, and that the grain size and optical band gap of gallium oxide are increased, the band gap Eg varies from 4.68 to 4.85 eV when tested by a room-temperature ultraviolet-visible (UV-VIS) spectrophotometer, and the (Eg) has also been calculated by using Tauc formula while the oxygen pressure η gradually increases.

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Ma Hai-Lin¹,
Su Qing²

1.
2.
Funds:Project supported by the Young Scholars Science Foundation of Lanzhou Jiaotong University, China (Grant No 2011037).

References

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Vol. 63, Issue 11 - 2014-06-05

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