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    Ma Lei, Jiang Bing, Chen Yi-Hao, Shen Bo, Peng Ying-Cai
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    • Nanocrystalline silicon nc-Si:H/SiC:H multilayers were fabricated by thermal annealing of the hydrogenated amorphous Si α-Si:H/hydrogenated amorphous silicon carbide α-SiC:H stacked structures prepared by plasma enhanced chemical vapor deposition (PECVD) system at 900–1000℃. The microstructures of annealed samples were investigated by Raman scattering, cross-section transmission electron microscopy (TEM), and Fourier transform infrared (FTIR) spectroscopy. Results demonstrate that the size of Si grains formed can be controlled by the α-Si:H layer thickness and annealing temperature. Optical absorption measurements show that the optical bandgap of the multilayered structures increases and the absorption coefficient decreases with diminishing Si grain size. However, the absorption coefficient and the optical bandgap of the multilayers are not influenced by the α-SiC:H layer thickness when the size of Si grains is kept constant.
        • Funds:Project supported by the National Natural Science Foundation of China (Grant No. 61306098), the Natural Science Foundation of Hebei Province, China (Grant Nos. E2012201088, F2013201196), the Research Foundation of Education Bureau of Hebei Province, China (Grant Nos. 2011237, ZH2012019), and the State Key Laboratoy for Artificial Microstructure and Mesoscopic Physics, Pecking University, Beijing, China.
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      Metrics
      • Abstract views:6252
      • PDF Downloads:492
      • Cited By:0
      Publishing process
      • Received Date:25 January 2014
      • Accepted Date:16 March 2014
      • Published Online:05 July 2014

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