[1] |
Hong Zi-Fan, Chen Hai-Feng, Jia Yi-Fan, Qi Qi, Liu Ying-Ying, Guo Li-Xin, Liu Xiang-Tai, Lu Qin, Li Li-Jun, Wang Shao-Qing, Guan Yun-He, Hu Qi-Ren.Characteristics of Ga2O3epitaxial films on seed layer grown by magnetron sputtering. Acta Physica Sinica, 2020, 69(22): 228103.doi:10.7498/aps.69.20200810 |
[2] |
Cao Yu, Xue Lei, Zhou Jing, Wang Yi-Jun, Ni Jian, Zhang Jian-Jun.Developments of c-Si1-xGex:H thin films as near-infrared absorber for thin film silicon solar cells. Acta Physica Sinica, 2016, 65(14): 146801.doi:10.7498/aps.65.146801 |
[3] |
Li Wen-Tao, Liang Yan, Wang Wei-Hua, Yang Fang, Guo Jian-Dong.Precise control of LaTiO3(110) film growth by molecular beam epitaxy and surface termination of the polar film. Acta Physica Sinica, 2015, 64(7): 078103.doi:10.7498/aps.64.078103 |
[4] |
Wang Jian-Yuan, Wang Chen, Li Cheng, Chen Song-Yan.Selective area growth of Ge film on Si. Acta Physica Sinica, 2015, 64(12): 128102.doi:10.7498/aps.64.128102 |
[5] |
He Qiong, Xu Xiang-Dong, Wen Yue-Jiang, Jiang Ya-Dong, Ao Tian-Hong, Fan Tai-Jun, Huang Long, Ma Chun-Qian, Sun Zi-Qiang.Growth mechanism and optoelectronic properties of vanadium oxide films prepared by Sol-Gel. Acta Physica Sinica, 2013, 62(5): 056802.doi:10.7498/aps.62.056802 |
[6] |
Chen Cheng-Zhao, Zheng Yuan-Yu, Huang Shi-Hao, Li Cheng, Lai Hong-Kai, Chen Song-Yan.Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD. Acta Physica Sinica, 2012, 61(7): 078104.doi:10.7498/aps.61.078104 |
[7] |
Jiang Yang, Luo Yi, Xi Guang-Yi, Wang Lai, Li Hong-Tao, Zhao Wei, Han Yan-Jun.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy. Acta Physica Sinica, 2009, 58(10): 7282-7287.doi:10.7498/aps.58.7282 |
[8] |
Lin Tao, Chen Zhi-Ming, Li Jia, Li Lian-Bi, Li Qing-Min, Pu Hong-Bin.Study of the growth characteristics of SiCGe layers grown on 6H-SiC substrates. Acta Physica Sinica, 2008, 57(9): 6007-6012.doi:10.7498/aps.57.6007 |
[9] |
Zhang Li-Ping, Zhang Jian-Jun, Zhang Xin, Shang Ze-Ren, Hu Zeng-Xin, Zhang Ya-Ping, Geng Xin-Hua, Zhao Ying.Investigation of microcrystalline silicon germanium prepared by hydrogen and helium gas mixture diluted VHFPA-RTCVD. Acta Physica Sinica, 2008, 57(11): 7338-7343.doi:10.7498/aps.57.7338 |
[10] |
Ma Tian-Bao, Hu Yuan-Zhong, Wang Hui.Growth mechanism of diamond-like carbon film based on the simulation model of atomic motion. Acta Physica Sinica, 2007, 56(1): 480-486.doi:10.7498/aps.56.480 |
[11] |
Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui.Poly-SiGe films prepared by metal-induced growth using UHVCVD system. Acta Physica Sinica, 2006, 55(7): 3756-3759.doi:10.7498/aps.55.3756 |
[12] |
Yang Hang-Sheng.Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica, 2006, 55(8): 4238-4246.doi:10.7498/aps.55.4238 |
[13] |
Huang Ping, Xu Ting-Xian, Cui Cai-E.Preparation and growth of SrBi4Ti4O15 ferroelectric thin film by sol-gel method. Acta Physica Sinica, 2006, 55(3): 1464-1471.doi:10.7498/aps.55.1464 |
[14] |
Zhang Yong-Ju, Yu Sen-Jiang, Ge Hong-Liang, Wu Liang-Neng, Cui Yu-Jian.Growth mechanism and ordered structures of iron films sputter-deposited on silicone oil surfaces. Acta Physica Sinica, 2006, 55(10): 5444-5450.doi:10.7498/aps.55.5444 |
[15] |
Huang Wen, Zeng Hui-Zhong, Zhang Ying, Jiang Shu-Wen, Wei Xian-Hua, Li Yan-Rong.Effects on the mechanism of nucleation and orientation of amorphous PZT nano thin film treated by different crystallization technics. Acta Physica Sinica, 2005, 54(3): 1334-1340.doi:10.7498/aps.54.1334 |
[16] |
Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang.Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica, 2005, 54(4): 1890-1894.doi:10.7498/aps.54.1890 |
[17] |
Zhang Dong-Ping, Qi Hong-Ji, Shao Jian-Da, Fan Rui-Ying, Fan Zheng-Xiu.Mechanism of nodule growth in ion beam sputtering films. Acta Physica Sinica, 2005, 54(3): 1385-1389.doi:10.7498/aps.54.1385 |
[18] |
MA XI-YING, HE DE-YAN, CHEN GUANG-HUA.SYNTHESIS AND MECHANISM OF BC2N THIN FILMS IN STALK-LIKE GROWTH. Acta Physica Sinica, 2001, 50(10): 2023-2027.doi:10.7498/aps.50.2023 |
[19] |
CUI DA-FU, CHEN FAN, ZHAO TONG, SHI WEN-SHENG, CHEN ZHENG-HAO, ZHOU YUE-LIANG, LV HUI-BIN, YANG GUO-ZHEN, HUANG HUI-ZHONG, ZHANG HONG-XIA.TOPMOST SURFACE AND GROWTH MECHANISM OF BaTiO3 THIN FILM GROWN BY LAS ER MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 2000, 49(9): 1878-1882.doi:10.7498/aps.49.1878 |
[20] |
LI MEI-YA, WANG ZHONG-LIE, XIONG GUANG-CHENG, FAN SHOU-SHAN, ZHAO QING-TAI, LIN KUI-XUN.EPITAXIAL GROWTH OF La0.5Sr0.5CoO3 THIN FILMS AND ITS MECHANISMS. Acta Physica Sinica, 1999, 48(1): 114-120.doi:10.7498/aps.48.114 |