[1] |
Jia Xiao-Fei, Wei Qun, Zhang Wen-Peng, He Liang, Wu Zhen-Hua.Analysis of thermal noise characteristics in 10 nm metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2023, 72(22): 227303.doi:10.7498/aps.72.20230661 |
[2] |
Ma Xin, Lu Bin, Dong Lin-Peng, Miao Yuan-Hao.A novel TMOSFET ternary inverter based on hybrid conduction mechanism. Acta Physica Sinica, 2023, 72(18): 188501.doi:10.7498/aps.72.20230819 |
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Chen Xiao-Liang, Sun Wei-Feng.Radiation hardening by process technology for high voltage nMOSFET in 180 nm embeded flash process. Acta Physica Sinica, 2022, 71(23): 236102.doi:10.7498/aps.71.20221172 |
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Wang Shuo, Chang Yong-Wei, Chen Jing, Wang Ben-Yan, He Wei-Wei, Ge Hao.Total ionizing dose effects on innovative silicon-on-insulator static random access memory cell. Acta Physica Sinica, 2019, 68(16): 168501.doi:10.7498/aps.68.20190405 |
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Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Wang Zu-Jun, Liu Min-Bo, Liu Jing, Sheng Jiang-Kun, Dong Guan-Tao, Xue Yuan-Yuan.Radiation effect and degradation mechanism in 65 nm CMOS transistor. Acta Physica Sinica, 2018, 67(14): 146103.doi:10.7498/aps.67.20172542 |
[6] |
Wang Fan, Li Yu-Dong, Guo Qi, Wang Bo, Zhang Xing-Yao, Wen Lin, He Cheng-Fa.Total ionizing dose radiation effects in foue-transistor complementary metal oxide semiconductor image sensors. Acta Physica Sinica, 2016, 65(2): 024212.doi:10.7498/aps.65.024212 |
[7] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
[8] |
Chen Rui, Yu Yong-Tao, Shangguan Shi-Peng, Feng Guo-Qiang, Han Jian-Wei.Mechanism of multiple bit upsets induced by localized latch-up effect in 90 nm complementary metal semiconductor static random-access memory. Acta Physica Sinica, 2014, 63(12): 128501.doi:10.7498/aps.63.128501 |
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke.Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, 2014, 63(22): 226101.doi:10.7498/aps.63.226101 |
[10] |
Cong Zhong-Chao, Yu Xue-Feng, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Sun Jing, Wang Bo, Ma Wu-Ying, Ma Li-Ya, Zhou Hang.Online and offline test method of total dose radiation damage on static random access memory. Acta Physica Sinica, 2014, 63(8): 086101.doi:10.7498/aps.63.086101 |
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Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao.Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica, 2014, 63(14): 148502.doi:10.7498/aps.63.148502 |
[12] |
Xiao Yao, Guo Hong-Xia, Zhang Feng-Qi, Zhao Wen, Wang Yan-Ping, Ding Li-Li, Fan Xue, Luo Yin-Hong, Zhang Ke-Ying.Synergistic effects of total ionizing dose on the single event effect sensitivity of static random access memory. Acta Physica Sinica, 2014, 63(1): 018501.doi:10.7498/aps.63.018501 |
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Ding Li-Li, Guo Hong-Xia, Chen Wei, Yan Yi-Hua, Xiao Yao, Fan Ru-Yu.Simulation study of the influence of ionizing irradiation on the single event upset vulnerability of static random access memory. Acta Physica Sinica, 2013, 62(18): 188502.doi:10.7498/aps.62.188502 |
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Zheng Qi-Wen, Yu Xue-Feng, Cui Jiang-Wei, Guo Qi, Ren Di-Yuan, Cong Zhong-Chao.Research on SRAM functional failure mode induced by total ionizing dose irradiation. Acta Physica Sinica, 2013, 62(11): 116101.doi:10.7498/aps.62.116101 |
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Li Ming, Yu Xue-Feng, Xue Yao-Guo, Lu Jian, Cui Jiang-Wei, Gao Bo.Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory. Acta Physica Sinica, 2012, 61(10): 106103.doi:10.7498/aps.61.106103 |
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Lan Bo, Gao Bo, Cui Jiang-Wei, Li Ming, Wang Yi-Yuan, Yu Xue-Feng, Ren Di-Yuan.Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2011, 60(6): 068702.doi:10.7498/aps.60.068702 |
[17] |
He Bao-Ping, Ding Li-Li, Yao Zhi-Bin, Xiao Zhi-Gang, Huang Shao-Yan, Wang Zu-Jun.Three-dimensional simulation of total dose effects on ultra-deep submicron devices. Acta Physica Sinica, 2011, 60(5): 056105.doi:10.7498/aps.60.056105 |
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Li Wei-Hua, Zhuang Yi-Qi, Du Lei, Bao Jun-Lin.Non-Gaussianity of noise in n-type metal oxide semiconductor field effect transistor. Acta Physica Sinica, 2009, 58(10): 7183-7188.doi:10.7498/aps.58.7183 |
[19] |
Zhang Ke-Ying, Guo Hong-Xia, Luo Yin-Hong, He Bao-Ping, Yao Zhi-Bin, Zhang Feng-Qi, Wang Yuan-Ming.Three-dimensional numerial simulation of single event upset effects in static random access memory. Acta Physica Sinica, 2009, 58(12): 8651-8656.doi:10.7498/aps.58.8651 |
[20] |
Zhang Qing-Xiang, Hou Ming-Dong, Liu Jie, Wang Zhi-Guang, Jin Yun-Fan, Zhu Zhi-Yong, Sun You-Mei.The dependence of single event upset cross-section on incident angle. Acta Physica Sinica, 2004, 53(2): 566-570.doi:10.7498/aps.53.566 |