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Zhang Xue, Kim Bokyung, Lee Hyeonju, Park Jaehoon.Low-temperature rapid preparation of high-performance indium oxide thin films and transistors based on solution technology. Acta Physica Sinica, 2024, 73(9): 096802.doi:10.7498/aps.73.20240082 |
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Kuang Dan, Xu Shuang, Shi Da-Wei, Guo Jian, Yu Zhi-Nong.High performance amorphous Ga2O3thin film solar blind ultraviolet photodetectors decorated with Al nanoparticles. Acta Physica Sinica, 2023, 72(3): 038501.doi:10.7498/aps.72.20221476 |
[3] |
Jing Bin, Xu Meng, Peng Cong, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng.Sol-gel indium-zinc-tin-oxide thin film transistor pixel array with superior stabilityunder negative bias illumination stress. Acta Physica Sinica, 2022, 71(13): 138502.doi:10.7498/aps.71.20220154 |
[4] |
Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng.Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica, 2019, 68(5): 057302.doi:10.7498/aps.68.20182088 |
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen.Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica, 2018, 67(4): 047302.doi:10.7498/aps.67.20172325 |
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Deng Lian-Wen.Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate. Acta Physica Sinica, 2017, 66(9): 097101.doi:10.7498/aps.66.097101 |
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Wang Jing, Liu Yuan, Liu Yu-Rong, Wu Wei-Jing, Luo Xin-Yue, Liu Kai, Li Bin, En Yun-Fei.Extraction of density of localized states in indium zinc oxide thin film transistor. Acta Physica Sinica, 2016, 65(12): 128501.doi:10.7498/aps.65.128501 |
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Xu Piao-Rong, Qiang Lei, Yao Ruo-He.A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor. Acta Physica Sinica, 2015, 64(13): 137101.doi:10.7498/aps.64.137101 |
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Tan Zai-Shang, Wu Xiao-Meng, Fan Zhong-Yong, Ding Shi-Jin.Effect of thermal annealing on the structure and properties of plasma enhanced chemical vapor deposited SiCOH film. Acta Physica Sinica, 2015, 64(10): 107701.doi:10.7498/aps.64.107701 |
[10] |
Xu Hua, Lan Lin-Feng, Li Min, Luo Dong-Xiang, Xiao Peng, Lin Zhen-Guo, Ning Hong-Long, Peng Jun-Biao.Effect of source/drain preparation on the performance of oxide thin-film transistors. Acta Physica Sinica, 2014, 63(3): 038501.doi:10.7498/aps.63.038501 |
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Zhang Geng-Ming, Guo Li-Qiang, Zhao Kong-Sheng, Yan Zhong-Hui.Effect of oxygen on stability performance of the IZO junctionless thin film transistors. Acta Physica Sinica, 2013, 62(13): 137201.doi:10.7498/aps.62.137201 |
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Li Xi-Feng, Xin En-Long, Shi Ji-Feng, Chen Long-Long, Li Chun-Ya, Zhang Jian-Hua.Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination. Acta Physica Sinica, 2013, 62(10): 108503.doi:10.7498/aps.62.108503 |
[13] |
Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101.doi:10.7498/aps.62.018101 |
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Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
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Zhao Kong-Sheng, Xuan Rui-Jie, Han Xiao, Zhang Geng-Ming.Junctionless low-voltage thin-film transistors based on indium-tin-oxide. Acta Physica Sinica, 2012, 61(19): 197201.doi:10.7498/aps.61.197201 |
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Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303 |
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Wang Xiong, Cai Xi-Kun, Yuan Zi-Jian, Zhu Xia-Ming, Qiu Dong-Jiang, Wu Hui-Zhen.Study of zinc tin oxide thin-film transistor. Acta Physica Sinica, 2011, 60(3): 037305.doi:10.7498/aps.60.037305 |
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Xu Tian-Ning, Wu Hui-Zhen, Zhang Ying-Ying, Wang Xiong, Zhu Xia-Ming, Yuan Zi-Jian.Fabrication and performance of indium oxide based transparent thin film transistors. Acta Physica Sinica, 2010, 59(7): 5018-5022.doi:10.7498/aps.59.5018 |
[19] |
Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
[20] |
.. Acta Physica Sinica, 2002, 51(2): 439-443.doi:10.7498/aps.51.439 |