[1] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[2] |
Duan Bao-Xing, Wang Jia-Sen, Tang Chun-Ping, Yang Yin-Tang.Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor. Acta Physica Sinica, 2024, 73(15): 157301.doi:10.7498/aps.73.20240572 |
[3] |
Ji Ting-Wei, Bai Gang.Effect of biaxial misfit strain on properties of ferroelectric double gate negative capacitance transistors. Acta Physica Sinica, 2023, 72(6): 067701.doi:10.7498/aps.72.20222190 |
[4] |
Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng.Capacitance model for nanowire gate-all-around tunneling field-effect-transistors. Acta Physica Sinica, 2021, 70(21): 218501.doi:10.7498/aps.70.20211128 |
[5] |
Liu Nai-Zhang, Yao Ruo-He, Geng Kui-Wei.Gate capacitance model of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2021, 70(21): 217301.doi:10.7498/aps.70.20210700 |
[6] |
Wu Meng-Dan, Zhou Sheng-Lin, Ye An-Na, Wang Min, Zhang Xiao-Hua, Yang Zhao-Hui.High-voltage flexible solid state supercapacitor based on neutral hydrogel/carbon nanotube arrays. Acta Physica Sinica, 2019, 68(10): 108201.doi:10.7498/aps.68.20182288 |
[7] |
Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
[8] |
Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue.Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica, 2016, 65(3): 038501.doi:10.7498/aps.65.038501 |
[9] |
Guo Li-Qiang, Wen Juan, Cheng Guang-Gui, Yuan Ning-Yi, Ding Jian-Ning.Dual in-plane-gate coupled IZO thin film transistor based on capacitive coupling effect in KH550-GO solid electrolyte. Acta Physica Sinica, 2016, 65(17): 178501.doi:10.7498/aps.65.178501 |
[10] |
Shi Lei, Feng Shi-Wei, Shi Bang-Bing, Yan Xin, Zhang Ya-Min.Degradation induced by voltage and current for AlGaN/GaN high-electron mobility transistor under on-state stress. Acta Physica Sinica, 2015, 64(12): 127303.doi:10.7498/aps.64.127303 |
[11] |
Liu Jing, Wu Yu, Gao Yong.Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica, 2014, 63(14): 148503.doi:10.7498/aps.63.148503 |
[12] |
Zhao Kai, Mu Zong-Xin, Zhang Jia-Liang.Dielectric layer equivalent capacitance and loading performance of a coaxial dielectric barrier discharge reactor. Acta Physica Sinica, 2014, 63(18): 185208.doi:10.7498/aps.63.185208 |
[13] |
Liu Xiang-Yu, Hu Hui-Yong, Zhang He-Ming, Xuan Rong-Xi, Song Jian-Jun, Shu Bin, Wang Bin, Wang Meng.Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage. Acta Physica Sinica, 2014, 63(23): 237302.doi:10.7498/aps.63.237302 |
[14] |
Liu Bin-Li, Tang Yong, Luo Yi-Fei, Liu De-Zhi, Wang Rui-Tian, Wang Bo.Investigation of the prediction model of IGBT junction temperature based on the rate of voltage change. Acta Physica Sinica, 2014, 63(17): 177201.doi:10.7498/aps.63.177201 |
[15] |
Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
[16] |
Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing.Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors. Acta Physica Sinica, 2012, 61(7): 076101.doi:10.7498/aps.61.076101 |
[17] |
Shi Wei-Wei, Li-Wen, Yi Ming-Dong, Xie Ling-Hai, Wei-Wei, Huang Wei.Progress of the improved mobilities of organic field-effect transistors based on dielectric surface modification. Acta Physica Sinica, 2012, 61(22): 228502.doi:10.7498/aps.61.228502 |
[18] |
Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
[19] |
Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei.High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337.doi:10.7498/aps.59.7333 |
[20] |
Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue.Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica, 2010, 59(12): 8877-8882.doi:10.7498/aps.59.8877 |