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Dong Shi-Jian, Guo Hong-Xia, Ma Wu-Ying, Lv Ling, Pan Xiao-Yu, Lei Zhi-Feng, Yue Shao-Zhong, Hao Rui-Jing, Ju An-An, Zhong Xiang-Li, Ouyang Xiao-Ping.Ionizing radiation damage mechanism and biases correlation of AlGaN/GaN high electron mobility transistor devices. Acta Physica Sinica, 2020, 69(7): 078501.doi:10.7498/aps.69.20191557 |
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Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian.Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301.doi:10.7498/aps.69.20200714 |
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Zhou Xing-Ye, Lv Yuan-Jie, Tan Xin, Wang Yuan-Gang, Song Xu-Bo, He Ze-Zhao, Zhang Zhi-Rong, Liu Qing-Bin, Han Ting-Ting, Fang Yu-Long, Feng Zhi-Hong.Mechanisms of trapping effects in short-gate GaN-based high electron mobility transistors with pulsed I-V measurement. Acta Physica Sinica, 2018, 67(17): 178501.doi:10.7498/aps.67.20180474 |
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Li Zhi-Peng, Li Jing, Sun Jing, Liu Yang, Fang Jin-Yong.High power microwave damage mechanism on high electron mobility transistor. Acta Physica Sinica, 2016, 65(16): 168501.doi:10.7498/aps.65.168501 |
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Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
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Ren Xing-Rong, Chai Chang-Chun, Ma Zhen-Yang, Yang Yin-Tang, Qiao Li-Ping, Shi Chun-Lei.The damage effect and mechanism of bipolar transistors induced by injection of electromagnetic pulse from the base. Acta Physica Sinica, 2013, 62(6): 068501.doi:10.7498/aps.62.068501 |
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Dan Jia-Kun, Ren Xiao-Dong, Huang Xian-Bin, Zhang Si-Qun, Zhou Shao-Tong, Duan Shu-Chao, Ouyang Kai, Cai Hong-Chun, Wei Bing, Ji Ce, He An, Xia Ming-He, Feng Shu-Ping, Wang Meng, Xie Wei-Ping.Electromagnetic pulse emission produced by Z pinch implosions. Acta Physica Sinica, 2013, 62(24): 245201.doi:10.7498/aps.62.245201 |
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Ma Ji-Gang, Ma Xiao-Hua, Zhang Hui-Long, Cao Meng-Yi, Zhang Kai, Li Wen-Wen, Guo Xing, Liao Xue-Yang, Chen Wei-Wei, Hao Yue.A semiempirical model for kink effect on the AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2012, 61(4): 047301.doi:10.7498/aps.61.047301 |
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Lü Ling, Zhang Jin-Cheng, Li Liang, Ma Xiao-Hua, Cao Yan-Rong, Hao Yue.Effects of 3 MeV proton irradiations on AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2012, 61(5): 057202.doi:10.7498/aps.61.057202 |
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Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua.Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205.doi:10.7498/aps.60.017205 |
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Lan Mu-Jie, Wu Yi-Yong, Hu Jian-Min, He Shi-Yu, Yue Long, Xiao Jing-Dong, Yang De-Zhuang, Zhang Zhong-Wei, Wang Xun-Chun, Qian Yong, Chen Ming-Bo.Radiation damage of space GaAs/Ge solar cells evaluated by displacement damage dose. Acta Physica Sinica, 2011, 60(9): 098110.doi:10.7498/aps.60.098110 |
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Wang Chong, Quan Si, Ma Xiao-Hua, Hao Yue, Zhang Jin-Cheng, Mao Wei.High temperature annealing of enhancement-mode AlGaN/GaN high-electron-mobility transistors. Acta Physica Sinica, 2010, 59(10): 7333-7337.doi:10.7498/aps.59.7333 |
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Chai Chang-Chun, Xi Xiao-Wen, Ren Xing-Rong, Yang Yin-Tang, Ma Zhen-Yang.The damage effect and mechanism of the bipolar transistor induced by the intense electromagnetic pulse. Acta Physica Sinica, 2010, 59(11): 8118-8124.doi:10.7498/aps.59.8118 |
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Lin Ruo-Bing, Wang Xin-Juan, Feng Qian, Wang Chong, Zhang Jin-Cheng, Hao Yue.Study on mechanism of AlGaN/GaN high electron mobility transistors by high temperature Schottky annealing. Acta Physica Sinica, 2008, 57(7): 4487-4491.doi:10.7498/aps.57.4487 |
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Li Xiao, Zhang Hai-Ying, Yin Jun-Jian, Liu Liang, Xu Jing-Bo, Li Ming, Ye Tian-Chun, Gong Min.Research of breakdown characteristic of InP composite channel HEMT. Acta Physica Sinica, 2007, 56(7): 4117-4121.doi:10.7498/aps.56.4117 |
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Wang Liang, Cao Jin-Xiang, Wang Yan, Niu Tian-Ye, Wang Ge, Zhu Ying.Experimental study of propagation time of electromagnetic pulse through laboratory plasma. Acta Physica Sinica, 2007, 56(3): 1429-1433.doi:10.7498/aps.56.1429 |
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Liu Hong-Xia, Hao Yue, Zhang Tao, Zheng Xue-Feng, Ma Xiao-Hua.Study on the kink effect in AlGaAs/InGaAs/GaAs PHEMTs. Acta Physica Sinica, 2003, 52(4): 984-988.doi:10.7498/aps.52.984 |
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Shen Wen-Zhong, Tang Wen-Guo, Shen Xue-Chu, A.Dimonlas.. Acta Physica Sinica, 1995, 44(5): 825-831.doi:10.7498/aps.44.825 |
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Shen Wen-Zhong, Tang Wen-Guo, Shen Xue-Chu, A.Dimoulas.. Acta Physica Sinica, 1995, 44(5): 779-787.doi:10.7498/aps.44.779 |
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LU LI-WU, ZHOU JIE, LIANG JI-BEN, KONG MEI-YING.DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE. Acta Physica Sinica, 1993, 42(5): 817-823.doi:10.7498/aps.42.817 |