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Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu.Vertical short-channel MoS2field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502.doi:10.7498/aps.71.20220738 |
[2] |
Zhang Jin-Feng, Xu Jia-Min, Ren Ze-Yang, He Qi, Xu Sheng-Rui, Zhang Chun-Fu, Zhang Jin-Cheng, Hao Yue.Characteristics of hydrogen-terminated single crystalline diamond field effect transistors with different surface orientations. Acta Physica Sinica, 2020, 69(2): 028101.doi:10.7498/aps.69.20191013 |
[3] |
Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102.doi:10.7498/aps.69.20200497 |
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Meng Xian-Cheng, Tian He, An Xia, Yuan Shuo, Fan Chao, Wang Meng-Jun, Zheng Hong-Xing.Field effect transistor photodetector based on two dimensional SnSe2. Acta Physica Sinica, 2020, 69(13): 137801.doi:10.7498/aps.69.20191960 |
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Wang Tian-Hui, Li Ang, Han Bai.First-principles study of graphyne/graphene heterostructure resonant tunneling nano-transistors. Acta Physica Sinica, 2019, 68(18): 187102.doi:10.7498/aps.68.20190859 |
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Song Hang, Liu Jie, Chen Chao, Ba Long.Graphene-based field effect transistor with ion-gel film gate. Acta Physica Sinica, 2019, 68(9): 097301.doi:10.7498/aps.68.20190058 |
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Zhang Jin-Feng, Yang Peng-Zhi, Ren Ze-Yang, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Xu Lei, Hao Yue.Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor. Acta Physica Sinica, 2018, 67(6): 068101.doi:10.7498/aps.67.20171965 |
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Zheng Jia-Jin, Wang Ya-Ru, Yu Ke-Han, Xu Xiang-Xing, Sheng Xue-Xi, Hu Er-Tao, Wei Wei.Field effect transistor photodetector based on graphene and perovskite quantum dots. Acta Physica Sinica, 2018, 67(11): 118502.doi:10.7498/aps.67.20180129 |
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Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue.Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica, 2017, 66(20): 208101.doi:10.7498/aps.66.208101 |
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Wu Pei, Hu Xiao, Zhang Jian, Sun Lian-Feng.Research status and development graphene devices using silicon as the subtrate. Acta Physica Sinica, 2017, 66(21): 218102.doi:10.7498/aps.66.218102 |
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Cheng Zheng-Fu, Zheng Rui-Lun.Influence of the anharmonic vibration on the Young modulus and the phonon frequency of the graphene. Acta Physica Sinica, 2016, 65(10): 104701.doi:10.7498/aps.65.104701 |
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Wu Chun-Yan, Du Xiao-Wei, Zhou Lin, Cai Qi, Jin Yan, Tang Lin, Zhang Han-Ge, Hu Guo-Hui, Jin Qing-Hui.Characterization and preliminary application of top-gated graphene ion-sensitive field effect transistors. Acta Physica Sinica, 2016, 65(8): 080701.doi:10.7498/aps.65.080701 |
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Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
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Xie Ling-Yun, Xiao Wen-Bo, Huang Guo-Qing, Hu Ai-Rong, Liu Jiang-Tao.Terahertz absorption of graphene enhanced by one-dimensional photonic crystal. Acta Physica Sinica, 2014, 63(5): 057803.doi:10.7498/aps.63.057803 |
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Bai Yu-Rong, Xu Jing-Ping, Liu Lu, Fan Min-Min, Huang Yong, Cheng Zhi-Xiang.Modeling on drain current of high-k gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 237304.doi:10.7498/aps.63.237304 |
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Chen Gao, Yang Yu-Jun, Guo Fu-Ming.Analysis on the cutoff frequency of high order harmonic generation in the crystal. Acta Physica Sinica, 2013, 62(8): 083202.doi:10.7498/aps.62.083202 |
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Zhang Jun-Yan, Deng Tian-Song, Shen Xin, Zhu Kong-Tao, Zhang Qi-Feng, Wu Jin-Lei.Electrical and optical properties of single As-doped ZnO nanowire field effect transistors. Acta Physica Sinica, 2009, 58(6): 4156-4161.doi:10.7498/aps.58.4156 |
[18] |
Chen Chang-Hong, Huang De-Xiu, Zhu Peng.Infrared absorption of VO2 based Mott transition field effect transistor dependent on optical phonon in α-SiN: H films. Acta Physica Sinica, 2007, 56(9): 5221-5226.doi:10.7498/aps.56.5221 |
[19] |
Zhao Guo-Wei, Wang Zhi-Jiang, Xu Yue-Min, Liang Zhi-Wei, Xu Jie.Numerical simulation of plasma nonlinear phenomena excited by radio-frequency wave using FDTD method. Acta Physica Sinica, 2007, 56(9): 5304-5308.doi:10.7498/aps.56.5304 |
[20] |
Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |