Bin Liu; Qing Liu; Er Pan; Renji Bian; Xiao Luo; Junpei Li; Fucai Liu

doi:10.7498/aps.75.20251367

Abstract
Ferroelectric thin films and their device applications have drawn wide attentions since 90s of the 20-century. However, due to the critical size effect, ferroelectric thin films cannot maintain the ferroelectric property as their thickness decreases to the nano size or one atomic thick, holding a big challenge for the development of related nano-electronic devices. With a naturally stable layered structure, two-dimensional materials exhibit many advantages such as high-quality and smooth interface without dangling bond, no interlayer interface defects and the ability to maintain complete physical and chemical properties even at limited atomic thickness. Thus, it is gradually realized that two-dimensional material is a good hotbed for the two-dimensional ferroelectricity. CuInP₂S₆, α-In₂Se₃, WTe₂, and other intrinsic ferroelectric 2D materials have been reported successively while artificially stacked sliding ferroelectrics such as t-BN have also emerged, which expands the types of 2D ferroelectric materials and opens a new road for the further miniaturization and flexibility of ferroelectric electronic devices. In this article, the recent research progress on two-dimensional ferroelectric materials was reviewed, the composition characteristics, structural features and property modulation of two-dimensional ferroelectric materials were discussed, and the application potential and future research hotspots of 2D ferroelectric materials were prospected.

Keywords:
Two-dimensional materials /

Ferroelectrics /

Room temperature two-dimensional ferroelectricity /

Ferroelectric devices
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