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Cao Yu, Zhang Jian-Jun, Yan Gan-Gui, Ni Jian, Li Tian-Wei, Huang Zhen-Hua, Zhao Ying.Influences of electrode separation on structural properties of μc-Si1-xGex：H thin films. Acta Physica Sinica, 2014, 63(7): 076801.doi:10.7498/aps.63.076801 |
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Ma Lei, Jiang Bing, Chen Yi-Hao, Shen Bo, Peng Ying-Cai.Structure and optical absorption of nc-Si：H/α-SiC：H multilayers. Acta Physica Sinica, 2014, 63(13): 136804.doi:10.7498/aps.63.136804 |
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Chen Shan, Wu Qing-Yun, Chen Zhi-Gao, Xu Gui-Gui, Huang Zhi-Gao.Ferromagnetism of C doped ZnO: first-principles calculation and Monte Carlo simulation. Acta Physica Sinica, 2009, 58(3): 2011-2017.doi:10.7498/aps.58.2011 |
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Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
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WANG YIN-SHU, LI JIN-MIN, WANG YAN-BIN, WANG YU-TIAN, SUN GUO-SHENG, LIN LAN-YING.THE EFFECTS OF PRE-IRRADIATION ON THE FORMATION OF Si1-xCx ALLOYS. Acta Physica Sinica, 2001, 50(7): 1329-1333.doi:10.7498/aps.50.1329 |
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PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
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WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING.THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica, 2000, 49(11): 2210-2213.doi:10.7498/aps.49.2210 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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DU KAI-YING, RAO HAI-BO.NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica, 1994, 43(6): 966-972.doi:10.7498/aps.43.966 |
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
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HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui.STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPY. Acta Physica Sinica, 1986, 35(9): 1253-1258.doi:10.7498/aps.35.1253 |
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HE YU-LIANG, YAN YONG-HONG.THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica, 1984, 33(10): 1472-1474.doi:10.7498/aps.33.1472 |
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Chen Guang-hua, Zhang Fang-qing, Xu Xi-xiang.BEHAVIOR OF PLASMONS IN GD-a-SixC1-x:H SAMPLES STUDIED BY XPS. Acta Physica Sinica, 1983, 32(6): 803-807.doi:10.7498/aps.32.803 |
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