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He Wei-Di, Zhang Pei-Yuan, Liu Xiang, Tian Xue-Fen, Fu Xin-Ge, Deng Ai-Hong.Defects in H/He neutral beam irradiated potassium doped tungsten alloy by positron annihilation technique. Acta Physica Sinica, 2021, 70(16): 167803.doi:10.7498/aps.70.20210438 |
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.Structure parameters design of InP HEMT epitaxial materials to improve the radiation-hardened ability. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211265 |
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Liu Si-Mian, Han Wei-Zhong.Mechanism of interaction between interface and radiation defects in metal. Acta Physica Sinica, 2019, 68(13): 137901.doi:10.7498/aps.68.20190128 |
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Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe.Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217.doi:10.7498/aps.64.154217 |
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Wang Cheng-Long, Wang Qing-Yu, Zhang Yue, Li Zhong-Yu, Hong Bing, Su Zhe, Dong Liang.Molecular dynamics study of cascade damage at SiC/C interface. Acta Physica Sinica, 2014, 63(15): 153402.doi:10.7498/aps.63.153402 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
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Zhou Kai, Li Hui, Wang Zhu.Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica, 2010, 59(7): 5116-5121.doi:10.7498/aps.59.5116 |
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Ouyang Fang-Ping, Xu Hui, Lin Feng.The electronic structure and transport properties ofgraphene nanoribbons with divacancies defects. Acta Physica Sinica, 2009, 58(6): 4132-4136.doi:10.7498/aps.58.4132 |
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Xia Zhi-Lin, Shao Jian-Da, Fan Zheng-Xiu.Effect of bulk inclusion in films on damage probability. Acta Physica Sinica, 2007, 56(1): 400-406.doi:10.7498/aps.56.400 |
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Lao Yan-Feng, Wu Hui-Zhen.Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures. Acta Physica Sinica, 2005, 54(9): 4334-4339.doi:10.7498/aps.54.4334 |
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YANG ZHI-AN, JIN TAO, YANG ZU-SHEN, QUI RE-XI, CUI MING-QI, LIU FENG-QIN.CHANGES OF SURFACE ELECTRON STATES OF InP UNDER SOFT X-RAYS IRRADIATION. Acta Physica Sinica, 1999, 48(6): 1113-1117.doi:10.7498/aps.48.1113 |
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WANG SONG-YOU, JIA YU, ZHENG WEI-MIN, MA BING-XIAN, QIAN DONG-LIANG, ZHENG YU-XIANG, CHEN LIANG-YAO.ELECTRONIC STRUCTURE OF As ON InP(110) SURFACE STUDIED THEORETICALLY. Acta Physica Sinica, 1998, 47(10): 1695-1703.doi:10.7498/aps.47.1695 |
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LIU FANG-XIN, ZHANG CHEN-HUA, JIN SI-ZHA0, XUAN ZHI-HUA, LI ZONG-MING.ELECTRON SPIN RESONANCE STUDY ON RADIOLYTIC DEFECT IN OPTICAL FIBER. Acta Physica Sinica, 1994, 43(11): 1871-1875.doi:10.7498/aps.43.1871 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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WANG EN-GE, ZHANG LI-YUAN, WANG HUAI-YU.EFFECT OF STRAIN ON THE BULK AND THE SURFACE ELECTRONIC STRUCTURES OF (GaP)1/(InP)1(111) SUPERLATTICE. Acta Physica Sinica, 1991, 40(3): 459-468.doi:10.7498/aps.40.459 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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LU FANG, SUN HENG-HUI, HUANG YUN, SHENG CHI, ZHANG ZENG-GUANG, WANG LIANG.STUDY OF THE DEFECTS IN SILICON PRODUCED BY HIGH TEMPERATURE ELECTRON IRRADIATION. Acta Physica Sinica, 1987, 36(6): 745-751.doi:10.7498/aps.36.745 |
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GU BING-LIN, LOU YONG-MING, GAO NAI-FEI, XIONG JIA-JIONG.ELECTRONIC STRUCTURE AND DEFECT SPECTROSCOPY OF POINT DEFECTS IN METALS. Acta Physica Sinica, 1986, 35(1): 17-24.doi:10.7498/aps.35.17 |
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WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN.A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS. Acta Physica Sinica, 1986, 35(5): 638-642.doi:10.7498/aps.35.638 |
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YU MIN-REN, WANG HONG-CHUAN, FANG ZHI-LIE, HOU XIAO-YUAN, WANG XUN.ELECTRON STIMULATED ADSORPTION STUDY OF OXYGEN ON InP CLEAN SURFACE. Acta Physica Sinica, 1984, 33(12): 1713-1718.doi:10.7498/aps.33.1713 |