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He Wei-Di, Zhang Pei-Yuan, Liu Xiang, Tian Xue-Fen, Fu Xin-Ge, Deng Ai-Hong.Defects in H/He neutral beam irradiated potassium doped tungsten alloy by positron annihilation technique. Acta Physica Sinica, 2021, 70(16): 167803.doi:10.7498/aps.70.20210438 |
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Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
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Zhou Kai, Li Hui, Wang Zhu.Defects in proton-irradiated Zn-doped GaSb studied by positron annihilation and photoluminescence. Acta Physica Sinica, 2010, 59(7): 5116-5121.doi:10.7498/aps.59.5116 |
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Zou Hui, Jing Hong-Yang, Wamg Zhi-Ping, Guan Qing-Feng.The vacancy defect clusters in polycrystalline pure nickle induced by high-current pulsed electron beam. Acta Physica Sinica, 2010, 59(9): 6384-6389.doi:10.7498/aps.59.6384 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Guan Qing-Feng, Cheng Du-Qing, Qiu Dong-Hua, Zhu Jian, Wang Xue-Tao, Cheng Xiu-Wei.The vacancy defect clusters in polycrystalline pure aluminum induced by high-current pulsed electron beam. Acta Physica Sinica, 2009, 58(7): 4846-4852.doi:10.7498/aps.58.4846 |
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Wang Bo, Zhao You-Wen, Dong Zhi-Yuan, Deng Ai-Hong, Miao Shan-Shan, Yang Jun.Electron irradiation induced defects in high temperature annealed InP single crystal. Acta Physica Sinica, 2007, 56(3): 1603-1607.doi:10.7498/aps.56.1603 |
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Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao.FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica, 2005, 54(5): 2256-2260.doi:10.7498/aps.54.2256 |
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Li Yang-Xian, Yang Shuai, Chen Gui-Feng, Ma Qiao-Yun, Niu Ping-Juan, Chen Dong-Feng, Li Hong-Tao, Wang Bao-Yi.Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon. Acta Physica Sinica, 2005, 54(4): 1783-1787.doi:10.7498/aps.54.1783 |
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TIAN REN-HE, ZHANG XIAO-JI, WU YU-GUANG, ZHANG HUI-XING.EFFECTS OF SELF-ION IRRADIATION ON SECONDARY DEFECTS IN MeV P+-IMPLANTED Si. Acta Physica Sinica, 1998, 47(6): 952-959.doi:10.7498/aps.47.952 |
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LIU FANG-XIN, ZHANG CHEN-HUA, JIN SI-ZHA0, XUAN ZHI-HUA, LI ZONG-MING.ELECTRON SPIN RESONANCE STUDY ON RADIOLYTIC DEFECT IN OPTICAL FIBER. Acta Physica Sinica, 1994, 43(11): 1871-1875.doi:10.7498/aps.43.1871 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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SHEN SAN-GUO, FAN XI-QING.ELECTRONIC STRUCTURE OF JAHN-TELLER DISTORTED PHOSPOROUS-VACANCY COMPLEX IN SILICON. Acta Physica Sinica, 1990, 39(10): 1653-1660.doi:10.7498/aps.39.1653 |
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JIANG XIAO-MING, WU ZI-QIN, QIAN LIN-ZHAO.X-RAY HUANG DIFFUSE SCATTERING FROM DEFECTS IN γ IRRADIATED LiF CRYSTAL. Acta Physica Sinica, 1989, 38(4): 529-533.doi:10.7498/aps.38.529 |
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WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI.STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS. Acta Physica Sinica, 1988, 37(7): 1203-1208.doi:10.7498/aps.37.1203 |
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CHEN GUANG-HUA, ZHANG FANG-QING.ELECTRON SPIN RESONANCE PROPERTIES OF AMORPHOUS SILICON-BASED ALLOY FILMS AT HIGH TEMPERATURES. Acta Physica Sinica, 1988, 37(7): 1059-1064.doi:10.7498/aps.37.1059 |
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SU FANG, C. LEE, P. C. TAYLOR.ELECTRON SPIN RESONANCE INVESTIGATION ON Si-H BONDS AND H-INDUCED DEFECTS IN SINGLE CRYSTALS OF SILICON. Acta Physica Sinica, 1988, 37(7): 1053-1058.doi:10.7498/aps.37.1053 |
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PENG CHEN, SUN HENG-HUI.THE BULK AND INTERFACE DEFECTS IN ELECTRON IRRADIATED InP. Acta Physica Sinica, 1987, 36(11): 1408-1415.doi:10.7498/aps.36.1408 |
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WU FENG-MEI, LAI QI-JI, SHEN BO, ZHOU GUO-QUAN.A STUDY OF ELECTRON IRRADIATION-INDUCED DEFECTS IN Si LAYERS. Acta Physica Sinica, 1986, 35(5): 638-642.doi:10.7498/aps.35.638 |
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DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI.DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485.doi:10.7498/aps.33.477 |