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Yang Xu-Yun, Chen Yong-Cong, Lu Wen-Bin, Zhu Xiao-Mei, Ao Ping.Energy transfer in photosynthesis mediated by resonant confinement of exciton-polariton. Acta Physica Sinica, 2022, 71(23): 234202.doi:10.7498/aps.71.20221412 |
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Liu Fu-Ti, Zhang Shu-Hua, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong.Theoretical calculation of electron transport properties of atomic chains of (GaAs)n (n=1-4). Acta Physica Sinica, 2016, 65(10): 106201.doi:10.7498/aps.65.106201 |
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Hu Heng-Kai, Wang Kai, Yang Guang, Liu Qian, Pei Wen-Jiang, Qiu Shen-Wei, Wei Cheng-Jian, Zhang Yi-Feng.Dynamical patterns of epidemic outbreaks on scale-free networks with traffic flow. Acta Physica Sinica, 2012, 61(20): 200209.doi:10.7498/aps.61.200209 |
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Xiong Wen, Zhao Hua.Calculation of exciton energies and binding energies in ZnO film. Acta Physica Sinica, 2007, 56(2): 1061-1065.doi:10.7498/aps.56.1061 |
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Zhang Hong, Liu Lei, Liu Jian-Jun.Binding energies of excitons in symmetrical GaAs/Al0.3Ga0.7As double quantum wells. Acta Physica Sinica, 2007, 56(1): 487-490.doi:10.7498/aps.56.487 |
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Yan Hai-Qing, Tang Chen, Zhang Hao, Liu Ming, Zhang Gui-Min.The variable metric algorithm for ground state energy of ionized-donor-bound excitons in semiconductors. Acta Physica Sinica, 2004, 53(11): 3877-3881.doi:10.7498/aps.53.3877 |
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Chen Dun-Jun, Shen Bo, Zhang Kai-Xiao, Deng Yong-Zhen, Fan Jie, Zhang Rong, Shi Yi, Zheng You-Dou.Structural properties of GaN1-xPx films. Acta Physica Sinica, 2003, 52(7): 1788-1791.doi:10.7498/aps.52.1788 |
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JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅰ ). Acta Physica Sinica, 2000, 49(12): 2494-2497.doi:10.7498/aps.49.2494 |
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JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅲ ). Acta Physica Sinica, 2000, 49(12): 2502-2506.doi:10.7498/aps.49.2502 |
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FU ROU-LI, YE HONG-JUAN, LI LEI, FU RONG-TANG, MIAO JIAN, SUN XIN, ZHANG ZHI-LIN.POLARIZATION OF SELF-TRAPPED EXCITON IN POLYMERS UNDER THE ELECTRIC FIELD. Acta Physica Sinica, 1998, 47(1): 94-101.doi:10.7498/aps.47.94 |
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ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI.THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica, 1991, 40(8): 1329-1338.doi:10.7498/aps.40.1329 |
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YUAN HAO-XIN, LI QI-GUANG, JIANG SHAN, LU WEI, TONG FEI-MING, TANG DING-YUAN.HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES. Acta Physica Sinica, 1990, 39(3): 464-471.doi:10.7498/aps.39.464 |
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ZHU JIA-LIN, TANG DAO-HUA, XIONG JIA-JIONG, GU BING-LIN.SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD. Acta Physica Sinica, 1989, 38(3): 385-393.doi:10.7498/aps.38.385 |
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GU YI-MING, HUANG MING-ZHU, WANG KE LING.ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM. Acta Physica Sinica, 1988, 37(1): 11-19.doi:10.7498/aps.37.11 |
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