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Zhao Hua-Liang, Peng Hong-Ling, Zhou Xu-Yan, Zhang Jian-Xin, Niu Bo-Wen, Shang Xiao, Wang Tian-Cai, Cao Peng.Structural design of dual carrier multiplication avalanche photodiodes on InP substrate. Acta Physica Sinica, 2023, 72(19): 198502.doi:10.7498/aps.72.20230885 |
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Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan.Design and simulation of Mg2Si/Si avalanche photodiode. Acta Physica Sinica, 2021, 70(10): 108501.doi:10.7498/aps.70.20201923 |
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Zhang Hai-Yan, Wang Lin-Li, Wu Chen-Yi, Wang Yu-Rong, Yang Lei, Pan Hai-Feng, Liu Qiao-Li, Guo Xia, Tang Kai, Zhang Zhong-Ping, Wu Guang.Avalanche photodiode single-photon detector with high time stability. Acta Physica Sinica, 2020, 69(7): 074204.doi:10.7498/aps.69.20191875 |
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Zhao Hong-Yu, Wang Di, Wei Zhi, Jin Guang-Yong.Finite element analysis and experimental study on electrical damage of silicon photodiode induced by millisecond pulse laser. Acta Physica Sinica, 2017, 66(10): 104203.doi:10.7498/aps.66.104203 |
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Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang.Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica, 2011, 60(4): 047303.doi:10.7498/aps.60.047303 |
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Mo Qiu-Yan, Zhao Yan-Li.Frequency responses of communication avalanche photodiodes. Acta Physica Sinica, 2011, 60(7): 072902.doi:10.7498/aps.60.072902 |
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Han Jin-Liang, Sun Li-Zhong, Chen Xiao-Shuang, Lu Wei, Zhong Jian-Xin.First-principles study of gold p-type doping in Hg1-xCdxTe. Acta Physica Sinica, 2010, 59(2): 1202-1211.doi:10.7498/aps.59.1202 |
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Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
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Wang Jin-Dong, Wu Zu-Heng, Zhang Bing, Wei Zheng-Jun, Liao Chang-Jun, Liu Song-Hao.A new circuit model for avalanche photodiodes to detect infrared single photon by transient process of transmission lines. Acta Physica Sinica, 2008, 57(9): 5620-5626.doi:10.7498/aps.57.5620 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1-xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
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HUANG SHI-HUA, MO YU-DONG.RESONANT RAMAN SCATTERING OF Hg1-xCdxTe . Acta Physica Sinica, 2001, 50(5): 964-967.doi:10.7498/aps.50.964 |
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LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT PROPERTIES OF GaAs SCHOTTKY DIODE CONTAINING InAs SELF-ASSEMBLED QUANTUM DOTS. Acta Physica Sinica, 2001, 50(2): 262-267.doi:10.7498/aps.50.262 |
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JIANG SHAN, ZHU HAO-RONG, SHEN XUE-CHU, J. SCHILZ.THE PRESSURE DEPENDENCE OF ENERGY GAP FOR MIXED CRYSTAL Hg0.3Cd0.7Te. Acta Physica Sinica, 1989, 38(11): 1858-1863.doi:10.7498/aps.38.1858 |
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Fu Rou-li.LOW FREQUENCY ABSORPTION BAND IN Hg1-xCdxTe. Acta Physica Sinica, 1986, 35(10): 1299-1305.doi:10.7498/aps.35.1299 |
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LI MING-FU, CHEN JIAN-XIN, YAO YU-SHU, BAI GUANG.HYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si. Acta Physica Sinica, 1985, 34(8): 1068-1074.doi:10.7498/aps.34.1068 |
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TSCHEN DSIN-GUANG.SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica, 1965, 21(2): 383-389.doi:10.7498/aps.21.383 |
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