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Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai.Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103.doi:10.7498/aps.64.148103 |
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Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei.Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701.doi:10.7498/aps.61.247701 |
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Han Jin-Liang, Sun Li-Zhong, Chen Xiao-Shuang, Lu Wei, Zhong Jian-Xin.First-principles study of gold p-type doping in Hg1－xCdxTe. Acta Physica Sinica, 2010, 59(2): 1202-1211.doi:10.7498/aps.59.1202 |
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Fang Qing-Qing, Wang Wei-Na, Zhou Jun, Wang Sheng-Nan, Yan Fang-Liang, Liu Yan-Mei, Li Yan, Lü Qing-Rong.Photoluminescence characteristics of Zn1-xMgxO films. Acta Physica Sinica, 2009, 58(8): 5836-5841.doi:10.7498/aps.58.5836 |
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Feng Xian-Jin, Ma Jin, Ge Song-Hua, Ji Feng, Wang Yong-Li, Yang Fan, Ma Hong-Lei.Structural and photoluminescence properties for SnO2:Sb films prepared on Al2O3 substrate. Acta Physica Sinica, 2007, 56(8): 4872-4876.doi:10.7498/aps.56.4872 |
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Wang Yu-Heng, Ma Jin, Ji Feng, Yu Xu-Hu, Zhang Xi-Jian, Ma Hong-Lei.Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering. Acta Physica Sinica, 2005, 54(4): 1731-1735.doi:10.7498/aps.54.1731 |
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Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1－xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
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Shao Jun.Optimal photoluminescence spectrum from Ti-doped ZnTe. Acta Physica Sinica, 2003, 52(7): 1743-1747.doi:10.7498/aps.52.1743 |
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HUANG SHI-HUA, MO YU-DONG.RESONANT RAMAN SCATTERING OF Hg1-xCdxTe . Acta Physica Sinica, 2001, 50(5): 964-967.doi:10.7498/aps.50.964 |
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JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GOU-ZHEN, MA ZHI-XUN, WANG SHAN-LI, HE LI, CHU JUN-HAO.INVESTIGATION OF THE LIGHT HOLE IN p-TYPE Hg1-xCdxTe. Acta Physica Sinica, 2000, 49(5): 959-964.doi:10.7498/aps.49.959 |
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LI LI-JUN, WANG ZUO-XIN, WU JIN-LEI.POSITRON ANNIHILATION TIME STUDY OF DEFECTS IN Hg1-xCdxTe SINGLE CRYSTALS. Acta Physica Sinica, 1998, 47(5): 844-850.doi:10.7498/aps.47.844 |
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GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(8): 1631-1635.doi:10.7498/aps.46.1631 |
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LI BIAO, CHU JUN-HAO, ZHU JI-QIAN, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN.CHARACTERIZATION OF Hg1-xCdxTe EPITAXIAL FILMS ON VARIOUS VICINAL PLANES. Acta Physica Sinica, 1997, 46(6): 1168-1173.doi:10.7498/aps.46.1168 |
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LI BIAO, CHU JUN-HAO, CHANG YONG, GUI YONG-SHENG, TANG DING-YUAN.INTRINSIC ABSORPTION OF Hg1-xCdx TE. Acta Physica Sinica, 1996, 45(5): 747-753.doi:10.7498/aps.45.747 |
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LI BIAO, CHU JUN-HAO, SHI XIAO-HONG, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN.FREE CARRIER ABSORPTION SPECTRA FOR Hg1-xCdxTe EPILAYERS. Acta Physica Sinica, 1996, 45(9): 1430-1437.doi:10.7498/aps.45.1430 |
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WEI YA-YI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.MAGNETIC-FIELD-INDUCED METAL-INSULATOR TRANSITION AND THERMALLY ACTIVATED ELECTRONIC TRANSPORT IN LOW COMPENSATED n-Hg1-xCdxTe. Acta Physica Sinica, 1994, 43(12): 2031-2037.doi:10.7498/aps.43.2031 |
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YUAN HAO-XIN, LI QI-GUANG, JIANG SHAN, LU WEI, TONG FEI-MING, TANG DING-YUAN.HYDROSTATIC PRESSURE STUDIES OF DEEP LEVELS AND RELATED CURRENT MECHANISMS IN Hg1-xCdxTe n+-P PHOTODIODES. Acta Physica Sinica, 1990, 39(3): 464-471.doi:10.7498/aps.39.464 |
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JIANG SHAN, ZHU HAO-RONG, SHEN XUE-CHU, J. SCHILZ.THE PRESSURE DEPENDENCE OF ENERGY GAP FOR MIXED CRYSTAL Hg0.3Cd0.7Te. Acta Physica Sinica, 1989, 38(11): 1858-1863.doi:10.7498/aps.38.1858 |
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ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.SHUBNIKOV-DE HAAS OSCILLATION IN n-Hg1-xCdxTe. Acta Physica Sinica, 1987, 36(1): 114-119.doi:10.7498/aps.36.114 |
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Fu Rou-li.LOW FREQUENCY ABSORPTION BAND IN Hg1-xCdxTe. Acta Physica Sinica, 1986, 35(10): 1299-1305.doi:10.7498/aps.35.1299 |
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