| [1] |
Zhang Ma-Lin, Ge Jian-Feng, Duan Ming-Chao, Yao Gang, Liu Zhi-Long, Guan Dan-Dan, Li Yao-Yi, Qian Dong, Liu Can-Hua, Jia Jin-Feng.Molecular beam epitaxy growth of multilayer FeSe thin film on SrTiO3 (001). Acta Physica Sinica, 2016, 65(12): 127401.doi:10.7498/aps.65.127401 |
| [2] |
Yu Cui, Li Jia, Liu Qing-Bin, Cai Shu-Jun, Feng Zhi-Hong.Quasi-equilibrium growth of monolayer epitaxial graphene on SiC (0001). Acta Physica Sinica, 2014, 63(3): 038102.doi:10.7498/aps.63.038102 |
| [3] |
Wei Pang, Li Kang, Feng Xiao, Ou Yun-Bo, Zhang Li-Guo, Wang Li-Li, He Ke, Ma Xu-Cun, Xue Qi-Kun.Growth of micro-devices of topological insulator thin films by molecular beam epitaxy on substrates pre-patterned with photolithography. Acta Physica Sinica, 2014, 63(2): 027303.doi:10.7498/aps.63.027303 |
| [4] |
Wang Meng, Ou Yun-Bo, Li Fang-Sen, Zhang Wen-Hao, Tang Chen-Jia, Wang Li-Li, Xue Qi-Kun, Ma Xu-Cun.Molecular beam epitaxy of single unit-cell FeSe superconducting films on SrTiO3(001). Acta Physica Sinica, 2014, 63(2): 027401.doi:10.7498/aps.63.027401 |
| [5] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
| [6] |
Su Shao-Jian, Wang Wei, Zhang Guang-Ze, Hu Wei-Xuan, Bai An-Qi, Xue Chun-Lai, Zuo Yu-Hua, Cheng Bu-Wen, Wang Qi-Ming.Epitaxial growth of Ge0.975Sn0.025alloy films on Si(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2011, 60(2): 028101.doi:10.7498/aps.60.028101 |
| [7] |
Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
| [8] |
Zhang Ying-Tang, He Meng, Chen Zi-Yu, Lü Hui-Bin.Epitaxial growth of La0.67Sr0.33MnO3 on glass by laser molecular beam epitaxy. Acta Physica Sinica, 2009, 58(3): 2002-2004.doi:10.7498/aps.58.2002 |
| [9] |
He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
| [10] |
Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano.Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131.doi:10.7498/aps.56.4127 |
| [11] |
LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
| [12] |
KANG JIAN, XIAO CHANG-YONG, XIONG YAN-YUN, FENG KE-AN, LIN ZHANG-DA.THE EFFECT OF ATOMIC OF HYDROGEN IN THE INITIAL PROCEDURE OF DIAMOND HETEROEPITAXY ON Si AND THE INTERFACE BETWEEN DIAMOND AND Si. Acta Physica Sinica, 1999, 48(11): 2104-2109.doi:10.7498/aps.48.2104 |
| [13] |
ZHANG YA-XIONG, LI AN-PING, CHEN KAI-MAO, ZHANG BO-RUI, SUN YUN-XI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA.ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES. Acta Physica Sinica, 1997, 46(5): 1011-1014.doi:10.7498/aps.46.1011 |
| [14] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
| [15] |
WANG JIE, Lü HONG-QIANG, LIU YONG, WANG XUN, YAO WEN-HUA, SHEN XIAO-LIANG.HETEROEPITAXIAL GROWTH OF ZnSe ON GaAs(lOO) SUBSTRATE BY HOT WALL BEAM EPITAXY. Acta Physica Sinica, 1992, 41(11): 1856-1861.doi:10.7498/aps.41.1856 |
| [16] |
HU FU-YI, LI AI-ZHEN.RAMAN SCATTERING STUDIES OF MBE-GROWN GaAs/Si. Acta Physica Sinica, 1991, 40(6): 962-968.doi:10.7498/aps.40.962 |
| [17] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, ZHOU GAO-LIANG, JIANO WEI-DONG, ZHANG XIANG-JIU, YU MING-REN.RHEED INTENSITY OSCILLATIONS IN THE PROCESS OF MOLECULAR BEAM EPITAXY GROWTH OF Ge AND Si ON Si SUBSTRATES. Acta Physica Sinica, 1990, 39(2): 237-244.doi:10.7498/aps.39.237 |
| [18] |
JIN GAO-LONG, CHEN KE-MING, SHENG CHI, ZHOU GUO-LIANG, JIANG WEI-DONG, ZHANG XIANG-JIU.OBSERVATION OF INTENSITY OSCILLATIONS OF RHEED DURING SILICON MOLECULAR BEAM EPITAXIAL GROWTH. Acta Physica Sinica, 1989, 38(3): 394-398.doi:10.7498/aps.38.394 |
| [19] |
.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
| [20] |
ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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