A method for studying grain growth kinetics of thin films by means of quasi-state measurement of films resistivity is proposed. Pd films is prepared by d c sputtering in ultra-high vacuum, and relationship between resistivity of Pd films and annealling time is measured at different tempertures The change of grain size of Pd films can be calculated by using the two-fluid model and can be compared with results of TEM. It is found that annealling temperature plays an important role in grain growth process and grain growing curve is imitated. The experiment results indicate that grain growth process is thermal activated and the activation energy is about 0. 53eV.