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Zhang Bin, Wang Wei-Li, Niu Qiao-Li, Zou Xian-Shao, Dong Jun, Zhang Yong.Effects of annealing in H2 atomsphere on optoelectronical properties of Nb-doped TiO2 thin films. Acta Physica Sinica, 2014, 63(6): 068102.doi:10.7498/aps.63.068102 |
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Ren Sheng, Ma Zhong-Yuan, Jiang Xiao-Fan, Wang Yue-Fei, Xia Guo-Yin, Chen Kun-Ji, Huang Xin-Fan, Xu Jun, Xu Ling, Li Wei, Feng Duan.Dependence of annealing temperatures on the optimized resistive switching behavior from SiOx (x=1.3) films. Acta Physica Sinica, 2014, 63(16): 167201.doi:10.7498/aps.63.167201 |
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Deng Quan, Ma Yong, Yang Xiao-Hong, Ye Li-Juan, Zhang Xue-Zhong, Zhang Qi, Fu Hong-Wei.Photoluminescence and Raman properties of Sb-doped ZnO thin film. Acta Physica Sinica, 2012, 61(24): 247701.doi:10.7498/aps.61.247701 |
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Fang Qing-Qing, Wang Wei-Na, Zhou Jun, Wang Sheng-Nan, Yan Fang-Liang, Liu Yan-Mei, Li Yan, Lü Qing-Rong.Photoluminescence characteristics of Zn1-xMgxO films. Acta Physica Sinica, 2009, 58(8): 5836-5841.doi:10.7498/aps.58.5836 |
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Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Preparation of SiOx nanowires in different atmosphere, their morphology, PL and FTIR properties. Acta Physica Sinica, 2009, 58(4): 2306-2312.doi:10.7498/aps.58.2306 |
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Wang Zhen-Ning, Jiang Mei-Fu, Ning Zhao-Yuan, Zhu Li.Structure and photoluminescence of Zn2GeO4 polycrystalline films prepared by radio-frequency magnetron sputtering. Acta Physica Sinica, 2008, 57(10): 6507-6512.doi:10.7498/aps.57.6507 |
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Wang Yu-Heng, Ma Jin, Ji Feng, Yu Xu-Hu, Zhang Xi-Jian, Ma Hong-Lei.Structural and photoluminescence characters of SnO22:Sb thin films pr epared by rf magnetron sputtering. Acta Physica Sinica, 2005, 54(4): 1731-1735.doi:10.7498/aps.54.1731 |
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Xu Da-Yin, Liu Yan-Ping, He Zhi-Wei, Fang Ze-Bo, Liu Xue-Qin, Wang Yin-Yue.The behavior of photoluminescence from SiC:Tb films deposited on porous silicon substrate. Acta Physica Sinica, 2004, 53(8): 2694-2698.doi:10.7498/aps.53.2694 |
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Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
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Zhang Xi-Tian, Xiao Zhi-Yan, Zhang Wei-Li, Gao Hong, Wang Yu-Xi, Liu Yi-Chun, Zhang Ji-Ying, Xu Wu.A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films. Acta Physica Sinica, 2003, 52(3): 740-744.doi:10.7498/aps.52.740 |
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WANG YONG-QIAN, CHEN CHANG-YONG, CHEN WEI-DE, YANG FU-HUA, DIAO HONG-WEI, XU ZHEN-JIA, ZHANG SHI-BIN, KONG GUANG-LIN, LIAO XIAN-BO.THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM. Acta Physica Sinica, 2001, 50(12): 2418-2422.doi:10.7498/aps.50.2418 |
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TONG SONG, LIU XIANG-NA, GAO TING, YIN HAO, CHEN YI-JUN, BAO XI-MAO.INTENSE ULTRAVIOLET PHOTOLUMINESCENCE AT ROOM TEMPERATURE IN AS-DEPOSITED Si∶H∶O FILMS. Acta Physica Sinica, 1999, 48(2): 378-384.doi:10.7498/aps.48.378 |
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YIN MIN, LOU LI-REN, ZHANG WEI-PING, XIA SHANG-DA, J.C.KRUPA.PREPARATION AND SITE SELECTIVELY EXCITED LUMINESCENCE OF NANOMETRIC SCALE X1-Y2SiO5∶Eu. Acta Physica Sinica, 1998, 47(7): 1207-1212.doi:10.7498/aps.47.1207 |
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WAN JUN, SHENG CHI, LU FANG, GONG DA-WEI, FAN YONG-LIANG, LIN FENG, WANG XUN.PHOTOLUMINESCENCE OF Er IN SiOx. Acta Physica Sinica, 1998, 47(10): 1741-1746.doi:10.7498/aps.47.1741 |
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LIN JUN, ZHANG LI-ZHU, ZHANG BO-RUI, ZONG BO-QING, QIN GUO-GANG, XU ZHEN-HUA.PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION. Acta Physica Sinica, 1994, 43(4): 646-650.doi:10.7498/aps.43.646 |
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CHEN GUANG-HUA, YAN SHAO-GUANG, ZHANG FANG-QING.A STUDY ON PHOTOLUMINESCENCE IN a-C:H FILMS. Acta Physica Sinica, 1992, 41(3): 500-505.doi:10.7498/aps.41.500 |
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WANG FU-CHAO, TANG WEN-GUO, LI ZHI-YUAN, SHEN XUE-CHU.EFFECT OF ANNEALING ON THE BANDTAIL STATES IN a-SixC1-x:H FILMS. Acta Physica Sinica, 1989, 38(1): 76-82.doi:10.7498/aps.38.76 |
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.X-RAY DIFFRACTION INVESTIGATION FOR ANNEALING OF Co-SPUTTERED W-Si FILMS ON S10_2_. Acta Physica Sinica, 1989, 38(8): 1379-1383.doi:10.7498/aps.38.1379 |
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MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN.EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica, 1986, 35(6): 725-730.doi:10.7498/aps.35.725 |
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