[1] |
Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai.Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103.doi:10.7498/aps.64.148103 |
[2] |
Zheng Yu-Long, Zhen Cong-Mian, Ma Li, Li Xiu-Ling, Pan Cheng-Fu, Hou Deng-Lu.Room-temperature ferromagnetism observed in Si-Al2O3 composite film. Acta Physica Sinica, 2011, 60(11): 117502.doi:10.7498/aps.60.117502 |
[3] |
Zheng Li-Ren, Huang Bai-Biao, Wei Ji-Yong.Synthesis of silicon oxide nanocluster and C-Si-O nanospheres morphology and photoluminscence Fourier transform infrared spectroscopy study. Acta Physica Sinica, 2009, 58(12): 8612-8616.doi:10.7498/aps.58.8612 |
[4] |
Niu Hua-Lei, Li Xiao-Na, Hu Bing, Dong Chuang, Jiang Xin.Room-temperature photoluminescence analysis of nano-β-FeSi2/a-Si multilayer films. Acta Physica Sinica, 2009, 58(6): 4117-4122.doi:10.7498/aps.58.4117 |
[5] |
Pan Xiao-Jun, Zhang Zhen-Xing, Wang Tao, Li Hui, Xie Er-Qing.Room temperature visible photoluminescence from nanocrystalline GaN∶Er film prepared by sputtering. Acta Physica Sinica, 2008, 57(6): 3786-3790.doi:10.7498/aps.57.3786 |
[6] |
Cai Yi, Wang Wen-Tao, Yang Ming, Liu Jian-Sheng, Lu Pei-Xiang, Li Ru-Xin, Xu Zhi-Zhan.Experimental study on extreme ultraviolet light generation from high power laser-irradiated tin slab. Acta Physica Sinica, 2008, 57(8): 5100-5104.doi:10.7498/aps.57.5100 |
[7] |
Wu Wei-Dong, He Ying-Jie, Wang Feng, Zhan Yong-Jun, Bai Li, Ju Xin, Chen Zheng-Hao, Tang Yong-Jian, Sun Wei-Guo, Pan Hai-Bin.Fabrication, microstructure and UPS spectra of Co: BaTiO3/Si(100) nano-composite films. Acta Physica Sinica, 2008, 57(1): 600-606.doi:10.7498/aps.57.600 |
[8] |
Wang Ying-Long, Lu Li-Fang, Yan Chang-Yu, Chu Li-Zhi, Zhou Yang, Fu Guang-Sheng, Peng Ying-Cai.The laser ablated deposition of Si nanocrystalline film with narrow photoluminescence peak. Acta Physica Sinica, 2005, 54(12): 5738-5742.doi:10.7498/aps.54.5738 |
[9] |
Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi.Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715.doi:10.7498/aps.53.3710 |
[10] |
Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan.Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750.doi:10.7498/aps.53.2746 |
[11] |
Zhang De-Heng, Wang Qing-Pu, Xue Zhong-Ying.Ultra violet photoluminescenc of ZnO films on different substrates. Acta Physica Sinica, 2003, 52(6): 1484-1487.doi:10.7498/aps.52.1484 |
[12] |
ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
[13] |
WANG YONG-QIAN, CHEN CHANG-YONG, CHEN WEI-DE, YANG FU-HUA, DIAO HONG-WEI, XU ZHEN-JIA, ZHANG SHI-BIN, KONG GUANG-LIN, LIAO XIAN-BO.THE MICROSTRUCTURE AND ITS HIGH-TEMPERATURE ANNEALING BEHAVIOURS OF a-Si∶O∶H FILM. Acta Physica Sinica, 2001, 50(12): 2418-2422.doi:10.7498/aps.50.2418 |
[14] |
LIU MING, HE YU-LIANG, JIANG XING-LIU, LI GUO-HUA, HAN HE-XIANG.PHOTOLUMINESCENCE STUDY ON HYDROGENATED NANO-CRYSTALLINE SILICON FILM. Acta Physica Sinica, 1998, 47(5): 864-870.doi:10.7498/aps.47.864 |
[15] |
MA ZHI-XUN, LIAO XIAN-BO, HE JIE, CHENG WEN-CHAO, YUE GUO-ZHEN, WANG YONG-QIAN, DIAO HONG-WEI, KONG GUANG-LIN.ANNEALING BEHAVIORS OF PHOTOLUMINESCENCE FROM SiOx∶H FILMS. Acta Physica Sinica, 1998, 47(6): 1033-1040.doi:10.7498/aps.47.1033 |
[16] |
LIN JUN, ZHANG LI-ZHU, ZHANG BO-RUI, ZONG BO-QING, QIN GUO-GANG, XU ZHEN-HUA.PHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION. Acta Physica Sinica, 1994, 43(4): 646-650.doi:10.7498/aps.43.646 |
[17] |
CHEN GUANG-HUA, YAN SHAO-GUANG, ZHANG FANG-QING.A STUDY ON PHOTOLUMINESCENCE IN a-C:H FILMS. Acta Physica Sinica, 1992, 41(3): 500-505.doi:10.7498/aps.41.500 |
[18] |
HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
[19] |
Zhang Fang-qing, Xu Xi-xiang, Chen Guang-hua, Jiang Zhi-chen, Chen Zhen-shi, Qi Shang-kui.STUDY OF VALENCE-BAND PROPERTIES IN a-Si1-xCx:H BY UV PHOTO-ELECTRON SPECTROSOPY. Acta Physica Sinica, 1986, 35(9): 1253-1258.doi:10.7498/aps.35.1253 |
[20] |
MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN.EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica, 1986, 35(6): 725-730.doi:10.7498/aps.35.725 |