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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
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Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao.Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica, 2013, 62(2): 026801.doi:10.7498/aps.62.026801 |
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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong.Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica, 2013, 62(13): 138101.doi:10.7498/aps.62.138101 |
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue.TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica, 2012, 61(18): 186103.doi:10.7498/aps.61.186103 |
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Li Biao, Chang Ben-Kang, Xu Yuan, Du Xiao-Qing, Du Yu-Jie, Wang Xiao-Hui, Zhang Jun-Ju.Research and development of GaN photocathode. Acta Physica Sinica, 2011, 60(8): 088503.doi:10.7498/aps.60.088503 |
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi.Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2010, 59(1): 504-507.doi:10.7498/aps.59.504 |
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu.Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909.doi:10.7498/aps.59.8903 |
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Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica, 2007, 56(11): 6717-6721.doi:10.7498/aps.56.6717 |
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua.Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica, 2007, 56(3): 1563-1567.doi:10.7498/aps.56.1563 |
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Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di.Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica, 2007, 56(2): 1036-1040.doi:10.7498/aps.56.1036 |
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong.Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica, 2006, 55(3): 1407-1412.doi:10.7498/aps.55.1407 |
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei.Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica, 2006, 55(10): 5216-5220.doi:10.7498/aps.55.5216 |
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua.A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica, 2004, 53(2): 646-650.doi:10.7498/aps.53.646 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi.Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica, 2004, 53(6): 1868-1872.doi:10.7498/aps.53.1868 |
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Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun.A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica, 2003, 52(10): 2632-2637.doi:10.7498/aps.52.2632 |
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Zhang Shi-Bin, Kong Guang-Lin, Xu Yan-Yue, Wang Yong-Qian, Diao Hong-Wei, Liao Xian-Bo.. Acta Physica Sinica, 2002, 51(1): 111-114.doi:10.7498/aps.51.111 |
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