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Liu Qing-Bin, Yu Cui, Guo Jian-Chao, Ma Meng-Yu, He Ze-Zhao, Zhou Chuang-Jie, Gao Xue-Dong, Yu Hao, Feng Zhi-Hong.Influence of polycrystalline diamond on silicon-based GaN material. Acta Physica Sinica, 2023, 72(9): 098104.doi:10.7498/aps.72.20221942 |
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Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
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Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie.Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica, 2021, 70(19): 197801.doi:10.7498/aps.70.20210122 |
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Xie Fei, Zang Hang, Liu Fang, He Huan, Liao Wen-Long, Huang Yu.Simulated research on displacement damage of gallium nitride radiated by different neutron sources. Acta Physica Sinica, 2020, 69(19): 192401.doi:10.7498/aps.69.20200064 |
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica, 2015, 64(17): 177804.doi:10.7498/aps.64.177804 |
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi.Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica, 2015, 64(10): 107801.doi:10.7498/aps.64.107801 |
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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong.Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica, 2013, 62(13): 138101.doi:10.7498/aps.62.138101 |
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Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao.Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica, 2013, 62(2): 026801.doi:10.7498/aps.62.026801 |
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi.Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2010, 59(1): 504-507.doi:10.7498/aps.59.504 |
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica, 2007, 56(11): 6717-6721.doi:10.7498/aps.56.6717 |
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua.Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica, 2007, 56(3): 1563-1567.doi:10.7498/aps.56.1563 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei.Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica, 2006, 55(10): 5216-5220.doi:10.7498/aps.55.5216 |
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Li Yong-Hua, Xu Peng-Shou, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun.First-principle study on GaN(1010) surface structure. Acta Physica Sinica, 2005, 54(1): 317-322.doi:10.7498/aps.54.317 |
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua.A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica, 2004, 53(2): 646-650.doi:10.7498/aps.53.646 |
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi.Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica, 2004, 53(6): 1868-1872.doi:10.7498/aps.53.1868 |
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Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun.A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica, 2003, 52(10): 2632-2637.doi:10.7498/aps.52.2632 |
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
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