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Duan Bao-Xing, Liu Yu-Lin, Tang Chun-Ping, Yang Yin-Tang.Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica, 2024, 73(7): 078501.doi:10.7498/aps.73.20231768 |
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Huang Xin-Yu, Zhang Jin-Xin, Wang Xin, Lü Ling, Guo Hong-Xia, Feng Juan, Yan Yun-Yi, Wang Hui, Qi Jun-Xiang.Numerical simulation of single-particle transients in low-noise amplifiers based on silicon-germanium heterojunction bipolar transistors and inverse-mode structures. Acta Physica Sinica, 2024, 73(12): 126103.doi:10.7498/aps.73.20240307 |
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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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Guo Chun-Sheng, Ding Yan, Jiang Bo-Yang, Liao Zhi-Heng, Su Ya, Feng Shi-Wei.High-efficiency on-line measurement of junction temperature based on bipolar transistors in accelerated experiment. Acta Physica Sinica, 2017, 66(22): 224703.doi:10.7498/aps.66.224703 |
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Li Pei, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Wang Xin, Zhang Jin-Xin.Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2015, 64(11): 118502.doi:10.7498/aps.64.118502 |
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke.Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, 2014, 63(22): 226101.doi:10.7498/aps.63.226101 |
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Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin.Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2014, 63(24): 248503.doi:10.7498/aps.63.248503 |
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Liu Jing, Guo Fei, Gao Yong.Mechanism and characteristic analysis and optimization of SiGeC heterojunction bipolar transistor with super junction. Acta Physica Sinica, 2014, 63(4): 048501.doi:10.7498/aps.63.048501 |
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Zhang Geng-Ming, Guo Li-Qiang, Zhao Kong-Sheng, Yan Zhong-Hui.Effect of oxygen on stability performance of the IZO junctionless thin film transistors. Acta Physica Sinica, 2013, 62(13): 137201.doi:10.7498/aps.62.137201 |
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Li Xing-Ji, Lan Mu-Jie, Liu Chao-Ming, Yang Jian-Qun, Sun Zhong-Liang, Xiao Li-Yi, He Shi-Yu.The influence of bias conditions on ionizing radiation damage of NPN and PNP transistors. Acta Physica Sinica, 2013, 62(9): 098503.doi:10.7498/aps.62.098503 |
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Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei.3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(4): 048501.doi:10.7498/aps.62.048501 |
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Sun Ya-Bin, Fu Jun, Xu Jun, Wang Yu-Dong, Zhou Wei, Zhang Wei, Cui Jie, Li Gao-Qing, Liu Zhi-Hong.Study on ionization damage of silicon-germanium heterojunction bipolar transistors at various dose rates. Acta Physica Sinica, 2013, 62(19): 196104.doi:10.7498/aps.62.196104 |
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Lu Dong, Jin Dong-Yue, Zhang Wan-Rong, Zhang Yu-Jie, Fu Qiang, Hu Rui-Xin, Gao Dong, Zhang Qing-Yuan, Huo Wen-Juan, Zhou Meng-Long, Shao Xiang-Peng.Novel microwave power sige heterojunction bipolar transistor with high thermal stability over a wide temperature range. Acta Physica Sinica, 2013, 62(10): 104401.doi:10.7498/aps.62.104401 |
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Zhou Shou-Li, Li Jia, Ren Hong-Liang, Wen Hao, Peng Yin-Sheng.The impact of interface charges at the heterojunction on the carriers transport in abrupt InP/InGaAs heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(17): 178501.doi:10.7498/aps.62.178501 |
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Zhao Geng, Cheng Xiao-Man, Tian Hai-Jun, Du Bo-Qun, Liang Xiao-Yu, Wu Feng.The influence of modified electrodes by V2O5 film on the performance of ambipolar organic field-effect transistors based on C60/Pentacene. Acta Physica Sinica, 2012, 61(21): 218502.doi:10.7498/aps.61.218502 |
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Chen Liang, Zhang Wan-Rong, Jin Dong-Yue, Xie Hong-Yun, Xiao Ying, Wang Ren-Qing, Ding Chun-Bao.Improvement on thermal stability of power heterojunction bipolar transistor using non-uniform finger spacing. Acta Physica Sinica, 2011, 60(7): 078501.doi:10.7498/aps.60.078501 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Xiao Ying, Zhang Wan-Rong, Jin Dong-Yue, Chen Liang, Wang Ren-Qing, Xie Hong-Yun.Effect of bandgap engineering on thermal characteristic of radiofrequency power SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2011, 60(4): 044402.doi:10.7498/aps.60.044402 |
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Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin.A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique. Acta Physica Sinica, 2009, 58(12): 8584-8590.doi:10.7498/aps.58.8584 |
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Liu Hai-Wen, Sun Xiao-Wei, Cheng Zhi-Qun, Che Yan-Feng, Li Zheng-Fan.A novel,yet direct,parameter-extraction method for heterojuction bipolar transis tors small-signal model. Acta Physica Sinica, 2003, 52(9): 2298-2303.doi:10.7498/aps.52.2298 |
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