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Liu Xiao-Jun, Yang Xue.Mechanism of fluorescence enhancement of HClO detected by excited-state intramolecular proton transfer based HBT-OMe molecule. Acta Physica Sinica, 2023, 72(11): 113101.doi:10.7498/aps.72.20222313 |
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Zhang Yan-Wen, Guo Gang, Xiao Shu-Yan, Yin Qian, Yang Xin-Yu.Measurement of medium-energy proton flux. Acta Physica Sinica, 2022, 71(1): 012902.doi:10.7498/aps.71.20211561 |
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Gao Cheng-Hao, Xu Feng, Zhang Li, Zhao De-Sheng, Wei Xing, Che Ling-Juan, Zhuang Yong-Zhang, Zhang Bao-Shun, Zhang Jing.Ion implantation isolation based micro-light-emitting diode device array properties. Acta Physica Sinica, 2020, 69(2): 027802.doi:10.7498/aps.69.20191418 |
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Zhang Bai-Qiang, Zheng Zhong-Shan, Yu Fang, Ning Jin, Tang Hai-Ma, Yang Zhi-An.Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials. Acta Physica Sinica, 2013, 62(11): 117303.doi:10.7498/aps.62.117303 |
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Mao Ming-Ming, Xu Chen, Wei Si-Min, Xie Yi-Yang, Liu Jiu-Cheng, Xu Kun.The effects of proton implant energy on threshold and output power of vertical cavity surface emitting laser. Acta Physica Sinica, 2012, 61(21): 214207.doi:10.7498/aps.61.214207 |
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Wang Zhi-Ming.Spin injection in GaAs and giant Hall effect. Acta Physica Sinica, 2011, 60(7): 077203.doi:10.7498/aps.60.077203 |
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Zheng Jia-Jin, Lu Yun-Qing, Li Pei-Li.Optical nonlinearities of excited state intramolecular proton transfer molecule HBT. Acta Physica Sinica, 2010, 59(7): 4687-4693.doi:10.7498/aps.59.4687 |
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Liu Yu-Min, Yu Zhong-Yuan, Ren Xiao-Min.Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot. Acta Physica Sinica, 2009, 58(1): 66-72.doi:10.7498/aps.58.66 |
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Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica, 2008, 57(2): 1266-1270.doi:10.7498/aps.57.1266 |
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Chen Gui-Bin, Li Zhi-Feng, Cai Wei-Ying, He Li, Hu Xiao-Ning, Lu Wei, Shen Xue-Chu.Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe. Acta Physica Sinica, 2003, 52(6): 1496-1499.doi:10.7498/aps.52.1496 |
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Shao Jun.Spectroscopic derivative in optical study of GaInAs/InP and GaInP/AlGaInP multip le quantum wells. Acta Physica Sinica, 2003, 52(10): 2534-2540.doi:10.7498/aps.52.2534 |
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MIU ZHONG-LIN, CHEN PING-PING, CAI WEI-YING, LI ZHI-FENG, XU WEN-LAN, YUAN XIAN-ZHANG, LIU PING, SHI GUO-LIANG, CHEN CHANG-MING, ZHU DE-ZHANG, PAN HAO-CHANG, HU JUN, LI MING-QIAN, LU WEI.. Acta Physica Sinica, 2001, 50(1): 116-119.doi:10.7498/aps.50.116 |
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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan, Lü Yun-an, He Mei-feng, Lan Li-qiao.γ RADIATION DEFECTS IN SEMI-INSULATING LEC GaAa AFTER SHALLOW IMPURITY IMPLANTATION. Acta Physica Sinica, 1994, 43(8): 1344-1351.doi:10.7498/aps.43.1344 |
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LIU SHI-JIE, S. U. CAMPISANO.LASER PULSE ANNEALING ION-IMPLANTED GaAs. Acta Physica Sinica, 1988, 37(5): 842-846.doi:10.7498/aps.37.842 |
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