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Liu Dong-Jing, Zhou Fu, Chen Shuai-Yang, Hu Zhi-Liang.Molecular dynamics of heat transport properties at gallium nitride/graphene/silicon carbide heterointerface. Acta Physica Sinica, 2023, 72(15): 157901.doi:10.7498/aps.72.20230537 |
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Zhou Ji-Yang, Li Qiang, Xu Jin-Shi, Li Chuan-Feng, Guo Guang-Can.Theoretical calculation of fiber cavity coupling silicon carbide membrance. Acta Physica Sinica, 2022, 71(6): 060303.doi:10.7498/aps.71.20211797 |
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Liu Dong-Jing, Wang Shao-Ming, Yang Ping.Thermal property of graphene/silicon carbide heterostructure by molecular dynamics simulation. Acta Physica Sinica, 2021, 70(18): 187302.doi:10.7498/aps.70.20210613 |
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Hu Hui-Yong, Liu Xiang-Yu, Lian Yong-Chang, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Shu Bin.Study on the influence of γ -ray total dose radiation effect on the threshold voltage and transconductance of the strained Si p-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2014, 63(23): 236102.doi:10.7498/aps.63.236102 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Su Bin, Wang Bin, Wang Guan-Yu.Physical compact modeling for threshold voltage of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(7): 077103.doi:10.7498/aps.62.077103 |
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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu.A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica, 2012, 61(4): 047303.doi:10.7498/aps.61.047303 |
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Wang Guan-Yu, Zhang He-Ming, Wang Xiao-Yan, Wu Tie-Feng, Wang Bin.Two-dimensional threshold voltage model of sub-100 nm strained-Si/SiGe nMOSFET. Acta Physica Sinica, 2011, 60(7): 077106.doi:10.7498/aps.60.077106 |
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Dong Gang, Liu Jia, Xue Meng, Yang Yin-Tang.Performance optimization of global interconnect basedon dual supply and dual threshold voltages. Acta Physica Sinica, 2011, 60(4): 046602.doi:10.7498/aps.60.046602 |
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Qu Jiang-Tao, Zhang He-Ming, Wang Guan-Yu, Wang Xiao-Yan, Hu Hui-Yong.Threshold voltage model for quantum-well channelpMOSFET with poly SiGe gate. Acta Physica Sinica, 2011, 60(5): 058502.doi:10.7498/aps.60.058502 |
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo.Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136.doi:10.7498/aps.59.8131 |
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Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming.The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2009, 58(1): 494-497.doi:10.7498/aps.58.494 |
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