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Xiao Shi-Liang, Wang Zhao-Hui, Wu Hong-Yi, Chen Xiong-Jun, Sun Qi, Tan Bo-Yu, Wang Hao, Qi Fu-Gang.Spectral analysis techniques in measuring neutron-induced gamma production cross-section. Acta Physica Sinica, 2024, 73(7): 072901.doi:10.7498/aps.73.20231980 |
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Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi.Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica, 2024, 73(5): 058501.doi:10.7498/aps.73.20231829 |
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Zhang Zhan-Gang, Yang Shao-Hua, Lin Qian, Lei Zhi-Feng, Peng Chao, He Yu-Juan.Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on Qinghai-Tibet Plateau. Acta Physica Sinica, 2023, 72(14): 146101.doi:10.7498/aps.72.20230161 |
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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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Li Wei, Bai Yu-Rong, Guo Hao-Xuan, He Chao-Hui, Li Yong-Hong.Geant4 simulation of neutron displacement damage effect in InP. Acta Physica Sinica, 2022, 71(8): 082401.doi:10.7498/aps.71.20211722 |
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.3D Simulation Study on the Mechanism of Influence Factor of Total Dose Ionizing Effect on SiGe HBT. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211795 |
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Chen Rui, Liang Ya-Nan, Han Jian-Wei, Wang Xuan, Yang Han, Chen Qian, Yuan Run-Jie, Ma Ying-Qi, Shangguan Shi-Peng.Single event effect and total dose effect of GaN high electron mobility transistor using heavy ions and gamma rays. Acta Physica Sinica, 2021, 70(11): 116102.doi:10.7498/aps.70.20202028 |
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Li Shun, Song Yu, Zhou Hang, Dai Gang, Zhang Jian.Statistical characteristics of total ionizing dose effects of bipolar transistors. Acta Physica Sinica, 2021, 70(13): 136102.doi:10.7498/aps.70.20201835 |
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Zhang Zhan-Gang, Lei Zhi-Feng, Tong Teng, Li Xiao-Hui, Wang Song-Lin, Liang Tian-Jiao, Xi Kai, Peng Chao, He Yu-Juan, Huang Yun, En Yun-Fei.Comparison of neutron induced single event upsets in 14 nm FinFET and 65 nm planar static random access memory devices. Acta Physica Sinica, 2020, 69(5): 056101.doi:10.7498/aps.69.20191209 |
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Luo Yin-Hong, Zhang Feng-Qi, Guo Hong-Xia, Wojtek Hajdas.Prediction of proton single event upset sensitivity based on heavy ion test data in nanometer hardened static random access memory. Acta Physica Sinica, 2020, 69(1): 018501.doi:10.7498/aps.69.20190878 |
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Qin Li, Guo Hong-Xia, Zhang Feng-Qi, Sheng Jiang-Kun, Ouyang Xiao-Ping, Zhong Xiang-Li, Ding Li-Li, Luo Yin-Hong, Zhang Yang, Ju An-An.Total ionizing dose effect of ferroelectric random access memory under Co-60 gamma rays and electrons. Acta Physica Sinica, 2018, 67(16): 166101.doi:10.7498/aps.67.20180829 |
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Zhao Wen, Guo Xiao-Qiang, Chen Wei, Qiu Meng-Tong, Luo Yin-Hong, Wang Zhong-Ming, Guo Hong-Xia.Effects of nuclear reactions between protons and metal interconnect overlayers on single event effects of micro/nano scaled static random access memory. Acta Physica Sinica, 2015, 64(17): 178501.doi:10.7498/aps.64.178501 |
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke.Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica, 2014, 63(22): 226101.doi:10.7498/aps.63.226101 |
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Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103.doi:10.7498/aps.60.116103 |
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Xiao Zhi-Qiang, Li Lei-Lei, Zhang Bo, Xu Jing, Chen Zheng-Cai.Total dose characteristics of single poly EEPROM and SONOS EEPROM on SOI. Acta Physica Sinica, 2011, 60(2): 028502.doi:10.7498/aps.60.028502 |
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He Bao-Ping, Chen Wei, Wang Gui-Zhen.A comparison of ionizing radiation damage in CMOS devices from 60Co Gamma rays, electrons and protons. Acta Physica Sinica, 2006, 55(7): 3546-3551.doi:10.7498/aps.55.3546 |
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He Chao-Hui, Geng Bin, He Bao-Ping, Yao Yu-Juan, Li Yong-Hong, Peng Hong-Lun, Lin Dong-Sheng, Zhou Hui, Chen Yu-Sheng.Test methods of total dose effects in verylarge scale integrated circuits. Acta Physica Sinica, 2004, 53(1): 194-199.doi:10.7498/aps.53.194 |
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He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Wang Yan-Ping, Li Guo-Zheng.Experimental study on irradiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(1): 180-187.doi:10.7498/aps.52.180 |
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Guo Hong-Xia, Chen Yu-Sheng, Zhang Yi-Men, Han Fu-Bin, He Chao-Hui, Zhou Hui.. Acta Physica Sinica, 2002, 51(10): 2315-2319.doi:10.7498/aps.51.2315 |
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