| [1] |
Zhang Lin, Ma Lin-Dong, Du Lin, Li Yan-Bo, Xu Xian-Feng, Huang Xin-Rong.Transient characteristics simulation of total ionizing dose effect on Si n-metal-oxide-semiconductor field effect transistor under different gate voltage. Acta Physica Sinica, 2023, 72(13): 138501.doi:10.7498/aps.72.20230207 |
| [2] |
Li Fen-Fei, Zhou Xiao-Yan, Zhang Kui-Bao, Shi Zhao-Hua, Chen Jin-Zhan, Ye Xin, Wu Wei-Dong, Li Bo.Effects of neutron irradiation on optical characteristics of Yb-doped fiber materials. Acta Physica Sinica, 2021, 70(19): 190201.doi:10.7498/aps.70.20210083 |
| [3] |
Wang Cheng-Long, Wang Qing-Yu, Zhang Yue, Li Zhong-Yu, Hong Bing, Su Zhe, Dong Liang.Molecular dynamics study of cascade damage at SiC/C interface. Acta Physica Sinica, 2014, 63(15): 153402.doi:10.7498/aps.63.153402 |
| [4] |
Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang.Effects of total ionizing dose on narrow-channel SOI NMOSFETs. Acta Physica Sinica, 2013, 62(7): 076104.doi:10.7498/aps.62.076104 |
| [5] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
| [6] |
Shang Huai-Chao, Liu Hong-Xia, Zhuo Qing-Qing.Degradation mechanism of SOI NMOS devices exposed to 60Co γ-ray at low dose rate. Acta Physica Sinica, 2012, 61(24): 246101.doi:10.7498/aps.61.246101 |
| [7] |
Zhuo Qing-Qing, Liu Hong-Xia, Yang Zhao-Nian, Cai Hui-Min, Hao Yue.The total dose irradiation effects of SOI NMOS devices under different bias conditions. Acta Physica Sinica, 2012, 61(22): 220702.doi:10.7498/aps.61.220702 |
| [8] |
Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min.Gate length dependence of SOI NMOS device response to total dose irradiation. Acta Physica Sinica, 2012, 61(24): 240703.doi:10.7498/aps.61.240703 |
| [9] |
Li Xi-Bin, Yuan Xiao-Dong, He Shao-Bo, Lü Hai-Bing, Wang Hai-Jun, Xiang Xia, Zheng Wan-Guo.Influence of laser passivation on fused silica damage after CO2 laser mitigation. Acta Physica Sinica, 2012, 61(6): 064401.doi:10.7498/aps.61.064401 |
| [10] |
Sheng Yu-Bang, Yang Lü-Yun, Luan Huai-Xun, Liu Zi-Jun, Li Jin-Yan, Dai Neng-Li.Gamma radiation effects on absorption and emission properties of erbium-doped silicate glasses. Acta Physica Sinica, 2012, 61(11): 116301.doi:10.7498/aps.61.116301 |
| [11] |
Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang.Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica, 2011, 60(5): 056106.doi:10.7498/aps.60.056106 |
| [12] |
Zhang Dong, Lu Xi-Rui, Yang Yan-Kai, Cui Chun-Long, Chen Meng-Jun.Capability of resisting γ-ray irradiation and Rietveld structurerefinement of zircon. Acta Physica Sinica, 2011, 60(7): 078901.doi:10.7498/aps.60.078901 |
| [13] |
Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei.Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation. Acta Physica Sinica, 2011, 60(9): 098502.doi:10.7498/aps.60.098502 |
| [14] |
Yu Jun, Zhou Peng, Zhao Heng-Yu, Wu Feng, Xia Hai-Ping, Su Liang-Bi, Xu Jun.Study on near-infrared broadband emission spectroscopic properties of Bi-doped α-BaB2O4 single crystal induced by γ-irradiation. Acta Physica Sinica, 2010, 59(5): 3538-3541.doi:10.7498/aps.59.3538 |
| [15] |
Shen Zi-Cai, Kong Wei-Jin, Feng Wei-Quan, Ding Yi-Gang, Liu Yu-Ming, Zheng Hui-Qi, Zhao Xue, Zhao Chun-Qing.Degradation model of the optical properties of the thermal control coatings. Acta Physica Sinica, 2009, 58(2): 860-864.doi:10.7498/aps.58.860 |
| [16] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua.Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211.doi:10.7498/aps.57.5205 |
| [17] |
Zhang Ke-Yan.Phase transition speed research of metal material at laser irradiation medium strength. Acta Physica Sinica, 2004, 53(6): 1815-1819.doi:10.7498/aps.53.1815 |
| [18] |
He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Li Guo-Zheng, Wang Yan-Ping.Mechanism of radiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(9): 2235-2238.doi:10.7498/aps.52.2235 |
| [19] |
He Chao-Hui, Geng Bin, Yang Hai-Liang, Chen Xiao-Hua, Wang Yan-Ping, Li Guo-Zheng.Experimental study on irradiation effects in floating gate ROMs. Acta Physica Sinica, 2003, 52(1): 180-187.doi:10.7498/aps.52.180 |
| [20] |
Guo Hong-Xia, Chen Yu-Sheng, Zhang Yi-Men, Han Fu-Bin, He Chao-Hui, Zhou Hui.. Acta Physica Sinica, 2002, 51(10): 2315-2319.doi:10.7498/aps.51.2315 |
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