| [1] |
Cui Xing-Hua, Xu Qiao-Jing, Shi Biao, Hou Fu-Hua, Zhao Ying, Zhang Xiao-Dan.Research progress of wide bandgap perovskite materials and solar cells. Acta Physica Sinica, 2020, 69(20): 207401.doi:10.7498/aps.69.20200822 |
| [2] |
Zhong Zi-Yuan, He Kai, Yuan Yun, Wang Tao, Gao Gui-Long, Yan Xin, Li Shao-Hui, Yin Fei, Tian Jin-Shou.Photorefractive effect of low-temperature-grown aluminum gallium arsenide. Acta Physica Sinica, 2019, 68(16): 167801.doi:10.7498/aps.68.20190459 |
| [3] |
Chang Xiao-Yang, Yao Shun, Zhang Qi-Ling, Zhang Yang, Wu Bo, Zhan Rong, Yang Cui-Bai, Wang Zhi-Yong.Anti-radiation of space triple-junction solar cell based on distributed Bragg reflector structure. Acta Physica Sinica, 2016, 65(10): 108801.doi:10.7498/aps.65.108801 |
| [4] |
Liu Fu-Ti, Zhang Shu-Hua, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong.Theoretical calculation of electron transport properties of atomic chains of (GaAs)n (n=1-4). Acta Physica Sinica, 2016, 65(10): 106201.doi:10.7498/aps.65.106201 |
| [5] |
Liu Fu-Ti, Cheng Yan, Chen Xiang-Rong, Cheng Xiao-Hong.Calculation of electron transport in GaAs nanoscale junctions using first-principles. Acta Physica Sinica, 2014, 63(13): 137303.doi:10.7498/aps.63.137303 |
| [6] |
Pan Hui-Ping, Bo Lian-Kun, Huang Tai-Wu, Zhang Yi, Yu Tao, Yao Shu-De.Structural analysis of Cu(In1-xGax)Se2 multi-layer thin film solar cells. Acta Physica Sinica, 2012, 61(22): 228801.doi:10.7498/aps.61.228801 |
| [7] |
Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica, 2008, 57(2): 1266-1270.doi:10.7498/aps.57.1266 |
| [8] |
Zhang Jian-Ming, Zou De-Shu, Liu Si-Nan, Xu Chen, Shen Guang-Di.A novel AlGaInP thin-film light emitting diode with omni directional reflector. Acta Physica Sinica, 2007, 56(5): 2905-2909.doi:10.7498/aps.56.2905 |
| [9] |
Liu Lin, Ye Yu-Tang, Wu Yun-Feng, Fang Liang, Lu Jia-Jia.Infrared characteristics of acidic droplet in different movement states on the surface of GaAs. Acta Physica Sinica, 2007, 56(6): 3172-3177.doi:10.7498/aps.56.3172 |
| [10] |
Yang Jian-Song, Li Bao-Xing.Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica, 2006, 55(12): 6562-6569.doi:10.7498/aps.55.6562 |
| [11] |
Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi.Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica, 2005, 54(4): 1904-1908.doi:10.7498/aps.54.1904 |
| [12] |
Guo Li-Jun, Wüstenberg Jan-Peter, Oleksiy Andreyev, Bauer Michael, Aeschlimann Martin.Spin dynamics of GaAs(100) by two-photon photoemission. Acta Physica Sinica, 2005, 54(7): 3200-3205.doi:10.7498/aps.54.3200 |
| [13] |
MA HAI-MING, LI FU-MING.SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs. Acta Physica Sinica, 1989, 38(9): 1530-1533.doi:10.7498/aps.38.1530 |
| [14] |
CHENG ZHAO-NIAN, WANG WEI-YUAN.ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs. Acta Physica Sinica, 1985, 34(7): 968-972.doi:10.7498/aps.34.968 |
| [15] |
MO DANG, PAN SHI-HONG, W. E. SPICER, I. LINDAU.PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE. Acta Physica Sinica, 1983, 32(11): 1467-1470.doi:10.7498/aps.32.1467 |
| [16] |
CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN.CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica, 1982, 31(7): 922-931.doi:10.7498/aps.31.922 |
| [17] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING.A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica, 1979, 28(5): 86-95.doi:10.7498/aps.28.86 |
| [18] |
ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU.MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica, 1979, 28(3): 350-357.doi:10.7498/aps.28.350 |
| [19] |
GAAS SINGLE CRYSTAL RESEARCH GROUP.TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica, 1976, 25(2): 179-180.doi:10.7498/aps.25.179 |
| [20] |
SHAW NAN, LIU YI-HUAN.X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica, 1964, 20(8): 699-704.doi:10.7498/aps.20.699 |
下载: