[1] |
Ji Jian-Wei, Kazuya Yamamura, Deng Hui.Plasma-assisted polishing for atomic surface fabrication of single crystal SiC. Acta Physica Sinica, 2021, 70(6): 068102.doi:10.7498/aps.70.20202014 |
[2] |
Zhang Hai-Bao, Chen Qiang.Recent progress of non-thermal plasma material surface treatment and functionalization. Acta Physica Sinica, 2021, 70(9): 095203.doi:10.7498/aps.70.20202233 |
[3] |
Mao Xin-Guang, Wang Jun, Shen Jie.Upconversion luminescence properties in Er3+/Yb3+ codoped TiO2 films prepared by magnetron sputtering. Acta Physica Sinica, 2014, 63(8): 087803.doi:10.7498/aps.63.087803 |
[4] |
Xu Yun, Li Yun-Peng, Jin Lu, Ma Xiang-Yang, Yang De-Ren.Low-threshold electrically pumped ultraviolet random lasing from ZnO film prepared by pulsed laser deposition. Acta Physica Sinica, 2013, 62(8): 084207.doi:10.7498/aps.62.084207 |
[5] |
Guo Zhi-Chao, Suo Hong-Li.The enhancement of current in superconductor wires by modifying and changing the surface region microstructure. Acta Physica Sinica, 2012, 61(23): 237106.doi:10.7498/aps.61.237106 |
[6] |
Jia Lu, Xie Er-Qing, Pan Xiao-Jun, Zhang Zhen-Xing.Optical properties of amorphous GaN films deposited by sputtering. Acta Physica Sinica, 2009, 58(5): 3377-3382.doi:10.7498/aps.58.3377 |
[7] |
Zhu Feng, Jiao Fei, Quan Sheng-Wen, Hao Jian-Kui, Zhao Kui.Surface dry treatment of RF superconducting cavity by sputtering. Acta Physica Sinica, 2009, 58(2): 876-881.doi:10.7498/aps.58.876 |
[8] |
Peng Hai-Bo, Wang Tie-Shan, Han Yun-Cheng, Ding Da-Jie, Xu He, Cheng Rui, Zhao Yong-Tao, Wang Yu-Yu.Study of channeling effect by impact of highly charged ions on crystal surface of Si(110). Acta Physica Sinica, 2008, 57(4): 2161-2164.doi:10.7498/aps.57.2161 |
[9] |
Xie Guo-Feng.Improving parallel electrode method by sputtering atoms' angle distribution rule. Acta Physica Sinica, 2008, 57(3): 1784-1787.doi:10.7498/aps.57.1784 |
[10] |
Lü Ling, Gong Xin, Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132.doi:10.7498/aps.57.1128 |
[11] |
Lu Xiao, Wu Chuan-Gui, Zhang Wan-Li, Li Yan-Rong.Dielectric breakdown of BST thin films prepared by RF sputtering. Acta Physica Sinica, 2006, 55(5): 2513-2517.doi:10.7498/aps.55.2513 |
[12] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
[13] |
Zhang Chao, Wang Yong-Liang, Yan Chao, Zhang Qing-Yu.Numerical simulation of the influence of substitutional impurity on the interaction between low-energy Pt atoms and Pt(111) surface. Acta Physica Sinica, 2006, 55(6): 2882-2891.doi:10.7498/aps.55.2882 |
[14] |
Wang Chong, Feng Qian, Hao Yue, Wan Hui.Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica, 2006, 55(11): 6085-6089.doi:10.7498/aps.55.6085 |
[15] |
Xie Guo-Feng, Wang De-Wu, Ying Chun-Tong.Ion extraction and collection studied by parallel electrode method on considerin g sputtering loss. Acta Physica Sinica, 2005, 54(4): 1543-1551.doi:10.7498/aps.54.1543 |
[16] |
Xie Guo-Feng, Wang De-Wu, Ying Chun-Tong.Ions extraction and collection using the RF resonance method and taking into consideration the sputtering loss. Acta Physica Sinica, 2005, 54(5): 2147-2152.doi:10.7498/aps.54.2147 |
[17] |
Meng Tie-Jun, Zhao Kui, Xie Da-Tao, Zhang Bao-Cheng, Wang Li-Fang, Zhu Feng, Chu Xiang-Qiang, Chen Jia-Er.Studies on the improvement of niobium-sputtered quarter wave resonator supercond ucting cavity. Acta Physica Sinica, 2003, 52(6): 1515-1519.doi:10.7498/aps.52.1515 |
[18] |
Zhu Hong-Lian, Wang De-Wu.. Acta Physica Sinica, 2002, 51(6): 1338-1345.doi:10.7498/aps.51.1338 |
[19] |
Zhang Chao, Lv Hai-Feng, Zhang Qing-Yu.. Acta Physica Sinica, 2002, 51(10): 2329-2334.doi:10.7498/aps.51.2329 |
[20] |
SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING.A STUDY ON ELECTRICAL RESISTIVITY OF RF SPUTTERING Pd FILMS. Acta Physica Sinica, 1990, 39(11): 1803-1810.doi:10.7498/aps.39.1803 |