| [1] |
Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue.Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2024, 73(3): 036103.doi:10.7498/aps.73.20221360 |
| [2] |
Lei Zhen-Shuai, Sun Xiao-Wei, Liu Zi-Jiang, Song Ting, Tian Jun-Hong.Phase diagram prediction and high pressure melting characteristics of GaN. Acta Physica Sinica, 2022, 71(19): 198102.doi:10.7498/aps.71.20220510 |
| [3] |
Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong.Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica, 2013, 62(13): 138101.doi:10.7498/aps.62.138101 |
| [4] |
Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao.Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica, 2013, 62(2): 026801.doi:10.7498/aps.62.026801 |
| [5] |
Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
| [6] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie.A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica, 2011, 60(9): 098107.doi:10.7498/aps.60.098107 |
| [7] |
Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di.Improved properties of light emitting diode by rough p-GaN grown at lower temperature. Acta Physica Sinica, 2010, 59(2): 1233-1236.doi:10.7498/aps.59.1233 |
| [8] |
Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da.p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica, 2010, 59(11): 8078-8082.doi:10.7498/aps.59.8078 |
| [9] |
Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi.Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2010, 59(1): 504-507.doi:10.7498/aps.59.504 |
| [10] |
Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun.Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica, 2009, 58(5): 3468-3473.doi:10.7498/aps.58.3468 |
| [11] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
| [12] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
| [13] |
Liu Jie, Hao Yue, Feng Qian, Wang Chong, Zhang Jin-Cheng, Guo Liang-Liang.Characterization of Ni/Au GaN Schottky contact base on I-V-T and C-V-T measurements. Acta Physica Sinica, 2007, 56(6): 3483-3487.doi:10.7498/aps.56.3483 |
| [14] |
Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica, 2007, 56(11): 6717-6721.doi:10.7498/aps.56.6717 |
| [15] |
Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua.Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica, 2007, 56(3): 1563-1567.doi:10.7498/aps.56.1563 |
| [16] |
Guo Bao-Zeng, Gong Na, Shi Jian-Ying, Wang Zhi-Yu.Monte Carlo simulation of the hole transport properties for wurtzite GaN. Acta Physica Sinica, 2006, 55(5): 2470-2475.doi:10.7498/aps.55.2470 |
| [17] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
| [18] |
Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben.A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica, 2006, 55(7): 3606-3610.doi:10.7498/aps.55.3606 |
| [19] |
Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei.Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica, 2006, 55(10): 5216-5220.doi:10.7498/aps.55.5216 |
| [20] |
Li Yong-Hua, Xu Peng-Shou, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun.First-principle study on GaN(1010) surface structure. Acta Physica Sinica, 2005, 54(1): 317-322.doi:10.7498/aps.54.317 |
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