[1] |
Lin Ming-Yue, Ju Bo, Li Yan, Chen Xue-Lian.Performance of 2-bromoterephthalic acid passivated all-inorganic perovskite cells. Acta Physica Sinica, 2021, 70(12): 128803.doi:10.7498/aps.70.20202005 |
[2] |
Cheng Chao, Wang Xun, Sun Jia-Xing, Cao Chao-Ming, Ma Yun-Li, Liu Yan-Xia.Electronic structure calculation of Cr content effect on corrosion resistance of Ti-Nb-Cr alloy. Acta Physica Sinica, 2018, 67(19): 197101.doi:10.7498/aps.67.20180956 |
[3] |
Yang Jian-Qun, Dong Lei, Liu Chao-Ming, Li Xing-Ji, Xu Peng-Fei.Impact of nitride passivation layer on ionizing irradiation damage on LPNP bipolar transistors. Acta Physica Sinica, 2018, 67(16): 168501.doi:10.7498/aps.67.20172215 |
[4] |
Wang Xiao-Ka, Tang Fu-Ling, Xue Hong-Tao, Si Feng-Juan, Qi Rong-Fei, Liu Jing-Bo.First-principles study of H, Cl and F passivation for Cu2ZnSnS4(112) surface states. Acta Physica Sinica, 2018, 67(16): 166401.doi:10.7498/aps.67.20180626 |
[5] |
Xu Jing, Liang Jia-Qing, Li Hong-Ping, Li Chang-Sheng, Liu Xiao-Juan, Meng Jian.First-principles study on the electronic structure of Ti-doped NbSe2. Acta Physica Sinica, 2015, 64(20): 207101.doi:10.7498/aps.64.207101 |
[6] |
Gao Tan-Hua.Structural and electronic properties of hydrogenated bilayer silicene. Acta Physica Sinica, 2015, 64(7): 076801.doi:10.7498/aps.64.076801 |
[7] |
He Yan-Bin, Jia Jian-Feng, Wu Hai-Shun.First-principles study of stability and electronic structure of N2H4 adsorption on NiFe(111) alloy surface. Acta Physica Sinica, 2015, 64(20): 203101.doi:10.7498/aps.64.203101 |
[8] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
[9] |
Gao Tan-Hua, Wu Shun-Qing, Zhang Peng, Zhu Zi-Zhong.Structural and electronic properties of hydrogenated bilayer boron nitride. Acta Physica Sinica, 2014, 63(1): 016801.doi:10.7498/aps.63.016801 |
[10] |
Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang.Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301.doi:10.7498/aps.62.197301 |
[11] |
Zheng Xue, Yu Xue-Gong, Yang De-Ren.Passivation property of -Si:H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801.doi:10.7498/aps.62.198801 |
[12] |
Zhang Xiang, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Jie, Shen Ze-Nan.The passivation of Al2O3 and its applications in the crystalline silicon solar cell. Acta Physica Sinica, 2012, 61(18): 187303.doi:10.7498/aps.61.187303 |
[13] |
Wang Yu-Mei, Pei Hui-Xia, Ding Jun, Wen Li-Wei.First-principles study of magnetism and electronic structureof Sb-containing half-Heusler alloys. Acta Physica Sinica, 2011, 60(4): 047110.doi:10.7498/aps.60.047110 |
[14] |
Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
[15] |
Zhang Guo-Ying, Yang Li-Na, Zhang Hui, Wu Jian-Jun.The study of the influence mechanism of platinum group and transition metals on the passivation of Ti alloys. Acta Physica Sinica, 2010, 59(3): 2022-2026.doi:10.7498/aps.59.2022 |
[16] |
Bi Zhi-Wei, Feng Qian, Hao Yue, Yue Yuan-Zheng, Zhang Zhong-Fen, Mao Wei, Yang Li-Yuan, Hu Gui-Zhou.Effect of Al2O3 dielectric layer thickness on the AlGaN/GaN metal-oxide-semiconductor higher-electron-mobility transistor characteristics. Acta Physica Sinica, 2009, 58(10): 7211-7215.doi:10.7498/aps.58.7211 |
[17] |
Liu Gui-Li.Electronic theoretical study on the corrosion and passivation mechanism of Ti metal. Acta Physica Sinica, 2008, 57(7): 4441-4445.doi:10.7498/aps.57.4441 |
[18] |
Zhang Guo-Ying, Zhang Hui, Liu Yan-Xia, Yang Li-Na.The electronic theory study of the influence of Pd on the passivation of Ti alloys. Acta Physica Sinica, 2008, 57(4): 2404-2408.doi:10.7498/aps.57.2404 |
[19] |
Sun Tao, Chen Xing-Guo, Hu Xiao-Ning, Li Yan-Jin.Analysis of surface leakage and 1/f noise on long-wavelength infrared HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(7): 3357-3362.doi:10.7498/aps.54.3357 |
[20] |
Xie Chang-Kun, Xu Fa-Qiang, Deng Rui, Xu Peng-Shou, Liu Feng-Qin, K.Yibulaxin.. Acta Physica Sinica, 2002, 51(11): 2606-2611.doi:10.7498/aps.51.2606 |