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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
| [3] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
| [4] |
Hou Zhen-Tao, Li Yan-Ru, Liu He-Yan, Dai Xue-Fang, Liu Guo-Dong, Liu Cai-Chi, Li Ying.Effect of Ga vacancy on the magnetism in GaN:Gd: First-principles calculation. Acta Physica Sinica, 2016, 65(12): 127102.doi:10.7498/aps.65.127102 |
| [5] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
| [6] |
Chen Cheng-Cheng, Liu Li-Ying, Wang Ru-Zhi, Song Xue-Mei, Wang Bo, Yan Hui.Preparation of nanostructured GaN films and their field emission enhancement for different substrates. Acta Physica Sinica, 2013, 62(17): 177701.doi:10.7498/aps.62.177701 |
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Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong.Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica, 2013, 62(1): 017103.doi:10.7498/aps.62.017103 |
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Wang Xiao-Hui, Xu Yuan.Comprehensive Survey for the Frontier Disciplines. Acta Physica Sinica, 2011, 60(10): 107901.doi:10.7498/aps.60.107901 |
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan.Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica, 2011, 60(12): 127901.doi:10.7498/aps.60.127901 |
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue.The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(8): 5705-5708.doi:10.7498/aps.58.5705 |
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Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui.Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica, 2009, 58(11): 7952-7957.doi:10.7498/aps.58.7952 |
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Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin.Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica, 2009, 58(8): 5847-5851.doi:10.7498/aps.58.5847 |
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Zhou Mei, Chang Qing-Ying, Zhao De-Gang.A new method to reduce the dark current of GaN based Schottky barrier ultraviolet photodetector. Acta Physica Sinica, 2008, 57(4): 2548-2553.doi:10.7498/aps.57.2548 |
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Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
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Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min.Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica, 2005, 54(12): 5830-5836.doi:10.7498/aps.54.5830 |
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Wan Wei, Tang Chun-Yan, Wang Yu-Mei, Li Fang-Hua.A study on the stacking fault in GaN crystals by high-resolution electron microscope imaging. Acta Physica Sinica, 2005, 54(9): 4273-4278.doi:10.7498/aps.54.4273 |
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin.Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica, 2004, 53(4): 1171-1176.doi:10.7498/aps.53.1171 |
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN.THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica, 2001, 50(9): 1800-1804.doi:10.7498/aps.50.1800 |
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