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Feng Li-Ya, Lu Hui-Min, Zhu Yi-Fan, Chen Yi-Yong, Yu Tong-Jun, Wang Jian-Ping.Intelligent optimization design of electron barrier layer for AlGaN-based deep-ultraviolet light-emitting diodes. Acta Physica Sinica, 2023, 72(4): 048502.doi:10.7498/aps.72.20222004 |
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Chen Jun-Fan, Ren Hui-Zhi, Hou Fu-Hua, Zhou Zhong-Xin, Ren Qian-Shang, Zhang De-Kun, Wei Chang-Chun, Zhang Xiao-Dan, Hou Guo-Fu, Zhao Ying.Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells. Acta Physica Sinica, 2019, 68(2): 028101.doi:10.7498/aps.68.20181759 |
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang.Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica, 2017, 66(15): 158501.doi:10.7498/aps.66.158501 |
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
[5] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
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Zeng Xiang-An, Ai Bin, Deng You-Jun, Shen Hui.Study on light-induced degradation of silicon wafers and solar cells. Acta Physica Sinica, 2014, 63(2): 028803.doi:10.7498/aps.63.028803 |
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Wang Xue-Song, Ji Zi-Wu, Wang Hui-Ning, Xu Ming-Sheng, Xu Xian-Gang, Lü Yuan-Jie, Feng Zhi-Hong.Internal quantum efficiency of InGaN/GaN multiple quantum well. Acta Physica Sinica, 2014, 63(12): 127801.doi:10.7498/aps.63.127801 |
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Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong.Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime. Acta Physica Sinica, 2013, 62(11): 110101.doi:10.7498/aps.62.110101 |
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Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
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Zhou Chun-Lan, Wang Wen-Jing, Zhao Lei, Li Hai-Ling, Diao Hong-Wei, Cao Xiao-Ning.Preparation and characterization of homogeneity and fine pyramids on the textured single silicon crystal. Acta Physica Sinica, 2010, 59(8): 5777-5783.doi:10.7498/aps.59.5777 |
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Zhu Li-Hong, Cai Jia-Fa, Li Xiao-Ying, Deng Biao, Liu Bao-Lin.Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers. Acta Physica Sinica, 2010, 59(7): 4996-5001.doi:10.7498/aps.59.4996 |
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Hu Wei-Da, Yin Fei, Ye Zhen-Hua, Quan Zhi-Jue, Hu Xiao-Ning, Li Zhi-Feng, Chen Xiao-Shuang, Lu Wei.Effects of absorption layer parameters and hetero-interface charge on photoresponse of 12.5 μm long-wavelength HgCdTe photodiode. Acta Physica Sinica, 2009, 58(11): 7891-7896.doi:10.7498/aps.58.7891 |
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Xu Xiang-Yan, Ye Zhen-Hua, Li Zhi-Feng, Lu Wei.Optimizing modeling of two-color middle wavelength infrared photovoltaic HgCdTe detectors. Acta Physica Sinica, 2007, 56(5): 2882-2889.doi:10.7498/aps.56.2882 |
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Chen Bing-Yan, Liu Yue-Hui, Chen Dong-Dan, Jiang Zhong-Hong.Influence of concentration of Er3+ ions on luminescence and fluorescence lifetime in TeO2-ZnO-Na2O-K2O glasses. Acta Physica Sinica, 2005, 54(7): 3418-3423.doi:10.7498/aps.54.3418 |
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LI HONG-JIAN, PENG JING-CUI, XU XIE-MEI, QU SHU, XIA HUI.THE EFFICIENCY OF THE FORMATION AND FISSION OF POLARON-EXCITONS IN POLYMER LIGHT-EMITTING DEVICES. Acta Physica Sinica, 2001, 50(11): 2247-2251.doi:10.7498/aps.50.2247 |
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SUN QIANG, GONG XIN-GAO, ZHENG QING-QI, WANG GUANG-HOU.THE FIRST-PRINCIPLE STUDY ON THE STRUCTURES AND MAGNETIC PROPERTIES OF Fe-B CLUSTERS. Acta Physica Sinica, 1996, 45(7): 1146-1152.doi:10.7498/aps.45.1146 |
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BAI KUI-CHANG, SU LEI, CHENG LI-ZHI, FENG WEI, HE KAI-YUAN.M?SSBAUER STUDY OF THE MECHANICAL ALLOYING Fe-B ALLOY. Acta Physica Sinica, 1996, 45(6): 990-994.doi:10.7498/aps.45.990 |
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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan.PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION. Acta Physica Sinica, 1994, 43(8): 1352-1359.doi:10.7498/aps.43.1352 |
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CHEN JIN-CHANG, SHEN BAO-GEN, ZHAN WEN-SHAN, ZHAO JIAN-GAO.EFFECT OF W ADDITION ON MAGNETIC, ELECTRIC PROPERTIES AND THERMAL STABILITY OF AMORPHOUS Fe-B ALLOYS. Acta Physica Sinica, 1986, 35(8): 979-988.doi:10.7498/aps.35.979 |
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FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG.RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica, 1985, 34(12): 1559-1566.doi:10.7498/aps.34.1559 |