[1] |
Fang Jia, Li Shuang-Liang, Xu Sheng-Zhi, Wei Chang-Chun, Zhao Ying, Zhang Xiao-Dan.Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy. Acta Physica Sinica, 2013, 62(16): 168103.doi:10.7498/aps.62.168103 |
[2] |
Hou Guo-Fu, Lu Peng, Han Xiao-Yan, Li Gui-Jun, Wei Chang-Chun, Geng Xin-Hua, Zhao Ying.Improving the light-soaking stability of a-Si: H/μc-Si: H tandem solar cells. Acta Physica Sinica, 2012, 61(13): 138401.doi:10.7498/aps.61.138401 |
[3] |
Hou Guo-Fu, Xue Jun-Ming, Yuan Yu-Jie, Zhang Xiao-Dan, Sun Jian, Chen Xin-Liang, Geng Xin-Hua, Zhao Ying.Key issues for high-efficiency silicon thin film solar cells prepared by RF-PECVD under high-pressure-depletion conditions. Acta Physica Sinica, 2012, 61(5): 058403.doi:10.7498/aps.61.058403 |
[4] |
Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang.rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica, 2011, 60(1): 018103.doi:10.7498/aps.60.018103 |
[5] |
Zheng Xin-Xia, Zhang Xiao-Dan, Yang Su-Su, Wang Guang-Hong, Xu Sheng-Zhi, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.a-Si ∶H/a-Si ∶H/μc-Si ∶H triple junction solar cells. Acta Physica Sinica, 2011, 60(6): 068801.doi:10.7498/aps.60.068801 |
[6] |
Zhang Xiao-Dan, Sun Fu-He, Xu Sheng-Zhi, Wang Guang-Hong, Wei Chang-Chun, Sun Jian, Hou Guo-Fu, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.Performance optimization of p-i-n type microcrystalline silicon thin films solar cells deposited in single chamber. Acta Physica Sinica, 2010, 59(2): 1344-1348.doi:10.7498/aps.59.1344 |
[7] |
Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying.Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica, 2009, 58(2): 1293-1297.doi:10.7498/aps.58.1293 |
[8] |
Qiu Sheng-Hua, Chen Cheng-Zhao, Liu Cui-Qing, Wu Yuan-Dan, Li Ping, Lin Xuan-Ying, Huang Chong, Yu Chu-Ying.Effect of hydrogen dilution on crystalline properties of nano-crystalline silicon thin films in fast growth. Acta Physica Sinica, 2009, 58(1): 565-569.doi:10.7498/aps.58.565 |
[9] |
Peng Wen-Bo, Liu Shi-Yong, Xiao Hai-Bo, Zhang Chang-Sha, Shi Ming-Ji, Zeng Xiang-Bo, Xu Yan-Yue, Kong Guang-Lin, Yu Yu-De.Gap states and microstructure of microcrystalline silicon thin films. Acta Physica Sinica, 2009, 58(8): 5716-5720.doi:10.7498/aps.58.5716 |
[10] |
Zhang Yong, Liu Yan, Lü Bin, Tang Nai-Yun, Wang Ji-Qing, Zhang Hong-Ying.Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells. Acta Physica Sinica, 2009, 58(4): 2829-2835.doi:10.7498/aps.58.2829 |
[11] |
Han Xiao-Yan, Hou Guo-Fu, Li Gui-Jun, Zhang Xiao-Dan, Yuan Yu-Jie, Zhang De-Kun, Chen Xin-Liang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua.Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells. Acta Physica Sinica, 2008, 57(8): 5284-5289.doi:10.7498/aps.57.5284 |
[12] |
Yuan Yu-Jie, Hou Guo-Fu, Xue Jun-Ming, Han Xiao-Yan, Liu Yun-Zhou, Yang Xing-Yun, Liu Li-Jie, Dong Pei, Zhao Ying, Geng Xin-Hua.The influence of n-layer on structural properties of i-layer in n-i-p μc-Si∶H thin film solar cells. Acta Physica Sinica, 2008, 57(6): 3892-3897.doi:10.7498/aps.57.3892 |
[13] |
Yang Shi-E, Wen Li-Wei, Chen Yong-Sheng, Wang Chang-Zhou, Gu Jin-Hua, Gao Xiao-Yong, Lu Jing-Xiao.Substrate temperature and B-doping effects on microstructure and electronic properties of p-type hydrogenated microcrystalline silicon films. Acta Physica Sinica, 2008, 57(8): 5176-5181.doi:10.7498/aps.57.5176 |
[14] |
Hou Guo-Fu, Xue Jun-Ming, Sun Jian, Guo Qun-Chao, Zhang De-Kun, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua, Li Yi-Gang.Research on silane depletion status during the deposition of silicon thin films by high-pressure PECVD. Acta Physica Sinica, 2007, 56(2): 1177-1181.doi:10.7498/aps.56.1177 |
[15] |
Guo Qun-Chao, Geng Xin-Hua, Sun Jian Wei, Chang-Chun, Han Xiao-Yan, Zhang Xiao_Dan, Zhao Ying.Role of gas residence time in the deposition rate and properties of microcrystalline silicon films. Acta Physica Sinica, 2007, 56(5): 2790-2795.doi:10.7498/aps.56.2790 |
[16] |
Chen Yong-Sheng, Gao Xiao-Yong, Yang Shi-E, Lu Jing-Xiao, Gu Jin-Hua.The influence of deposition temperature on the structure of microcrystalline silicon film. Acta Physica Sinica, 2007, 56(7): 4122-4126.doi:10.7498/aps.56.4122 |
[17] |
Yu Yun-Peng, Lin Xuan-Ying, Lin Shun-Hui, Huang Rui.Influence of light exposure and applied bias on the conductivity of microcrystalline silicon films at room temperature. Acta Physica Sinica, 2006, 55(4): 2038-2043.doi:10.7498/aps.55.2038 |
[18] |
Gao Xiao-Yong, Li Rui, Chen Yong-Sheng, Lu Jing-Xiao, Liu Ping, Feng Tuan-Hui, Wang Hong-Juan, Yang Shi-E.Study of the structural and optical properties of microcrystalline silicon film. Acta Physica Sinica, 2006, 55(1): 98-101.doi:10.7498/aps.55.98 |
[19] |
Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Wu Chun-Ya, Gao Yan-Tao, Hou Guo-Fu, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen.A study of Raman and optical emission spectroscopy on microcrystalline silicon films deposited by VHF-PECVD. Acta Physica Sinica, 2005, 54(1): 445-449.doi:10.7498/aps.54.445 |
[20] |
Zhang Shi-Bin, Kong Guang-Lin, Xu Yan-Yue, Wang Yong-Qian, Diao Hong-Wei, Liao Xian-Bo.. Acta Physica Sinica, 2002, 51(1): 111-114.doi:10.7498/aps.51.111 |