| [1] |
Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917 |
| [2] |
Xu Da-Lin, Wang Yu-Qi, Li Xin-Hua, Shi Tong-Fei.Effect of charge coupling on breakdown voltage of high voltage trench-gate-type super barrier rectifier. Acta Physica Sinica, 2021, 70(6): 067301.doi:10.7498/aps.70.20201558 |
| [3] |
Yang Chu-Ping, Geng Yi-Nan, Wang Jie, Liu Xing-Nan, Shi Zhen-Gang.Breakdown voltage of high pressure helium parallel plates and effect of field emission. Acta Physica Sinica, 2021, 70(13): 135102.doi:10.7498/aps.70.20210086 |
| [4] |
Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang.Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica, 2017, 66(16): 167301.doi:10.7498/aps.66.167301 |
| [5] |
Zhao Yi-Han, Duan Bao-Xing, Yuan Song, Lü Jian-Mei, Mei Yang.Novel lateral double-diffused MOSFET with vertical assisted deplete-substrate layer. Acta Physica Sinica, 2017, 66(7): 077302.doi:10.7498/aps.66.077302 |
| [6] |
Duan Bao-Xing, Li Chun-Lai, Ma Jian-Chong, Yuan Song, Yang Yin-Tang.New folding lateral double-diffused metal-oxide-semiconductor field effect transistor with the step oxide layer. Acta Physica Sinica, 2015, 64(6): 067304.doi:10.7498/aps.64.067304 |
| [7] |
Yue Shan, Liu Xing-Nan, Shi Zhen-Gang.Experimental study on breakdown voltage between parallel plates in high-pressure helium. Acta Physica Sinica, 2015, 64(10): 105101.doi:10.7498/aps.64.105101 |
| [8] |
Cao Zhen, Duan Bao-Xing, Yuan Xiao-Ning, Yang Yin-Tang.Complete three-dimensional reduced surface field super junction lateral double-diffused metal-oxide-semiconductor field-effect transistor with semi-insulating poly silicon. Acta Physica Sinica, 2015, 64(18): 187303.doi:10.7498/aps.64.187303 |
| [9] |
Duan Bao-Xing, Yang Yin-Tang.Breakdown voltage analysis for the new Al0.25 Ga0.75N/GaN HEMTs with the step AlGaN layers. Acta Physica Sinica, 2014, 63(5): 057302.doi:10.7498/aps.63.057302 |
| [10] |
Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong, Zhang Wei-Hua, Dai Hong-Li.A dual-trench silicon on insulator high voltage device with an L-shaped source field plate. Acta Physica Sinica, 2014, 63(23): 237305.doi:10.7498/aps.63.237305 |
| [11] |
Duan Bao-Xing, Cao Zhen, Yuan Song, Yuan Xiao-Ning, Yang Yin-Tang.New super junction lateral double-diffused MOSFET with electric field modulation by differently doping the buffered layer. Acta Physica Sinica, 2014, 63(24): 247301.doi:10.7498/aps.63.247301 |
| [12] |
Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong.A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate. Acta Physica Sinica, 2014, 63(10): 107302.doi:10.7498/aps.63.107302 |
| [13] |
Duan Bao-Xing, Cao Zhen, Yuan Xiao-Ning, Yang Yin-Tang.New REBULF super junction LDMOS with the N type buffered layer. Acta Physica Sinica, 2014, 63(22): 227302.doi:10.7498/aps.63.227302 |
| [14] |
Wang Xiao-Wei, Luo Xiao-Rong, Yin Chao, Fan Yuan-Hang, Zhou Kun, Fan Ye, Cai Jin-Yong, Luo Yin-Chun, Zhang Bo, Li Zhao-Ji.Mechanism and optimal design of a high-k dielectric conduction enhancement SOI LDMOS. Acta Physica Sinica, 2013, 62(23): 237301.doi:10.7498/aps.62.237301 |
| [15] |
Duan Bao-Xing, Yang Yin-Tang, Kevin J. Chen.Breakdown voltage analysis for new Al0.25Ga0.75N/GaN HEMT with F ion implantation. Acta Physica Sinica, 2012, 61(22): 227302.doi:10.7498/aps.61.227302 |
| [16] |
Wei Wei, Hao Yue, Feng Qian, Zhang Jin-Cheng, Zhang Jin-Feng.Geometrical optimization of AlGaN/GaN field-plate high electron mobility transistor. Acta Physica Sinica, 2008, 57(4): 2456-2461.doi:10.7498/aps.57.2456 |
| [17] |
Li Qi, Li Zhao-Ji, Zhang Bo.Analytical model for the surface electrical field distribution of double RESURF device with surface implanted P-top region. Acta Physica Sinica, 2007, 56(11): 6660-6665.doi:10.7498/aps.56.6660 |
| [18] |
Guo Liang-Liang, Feng Qian, Hao Yue, Yang Yan.Study of high breakdown-voltage AlGaN/GaN FP-HEMT. Acta Physica Sinica, 2007, 56(5): 2895-2899.doi:10.7498/aps.56.2895 |
| [19] |
Zhao Yi, Wan Xing-Gong.Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process. Acta Physica Sinica, 2006, 55(6): 3003-3006.doi:10.7498/aps.55.3003 |
| [20] |
Fang Jian, Qiao Ming, Li Zhao-Ji.Electric field distribution in charge imbalance super junction. Acta Physica Sinica, 2006, 55(7): 3656-3663.doi:10.7498/aps.55.3656 |
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