[1] |
Yan Yong-Biao, Li Shuang, Ding Shuang-Shuang, Zhang Bing-Xue, Sun Hao, Ju Quan-Hao, Yao Lu.Novel high-sensitivity optical thermometry based on fluorescence intensity ratio of
${\text{VO}}_4^{3 - } $
to Pr3+. Acta Physica Sinica, 2024, 73(9): 097801.doi:10.7498/aps.73.20240012 |
[2] |
Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li.A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501.doi:10.7498/aps.71.20220879 |
[3] |
Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong.Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102.doi:10.7498/aps.70.20200921 |
[4] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
[5] |
Liu Chao, Wei Zhi-Peng, An Ning, He Bin-Tai, Liu Peng-Cheng, Liu Guo-Jun.Calculation methods of InGaAsSb quaternary alloy band gap. Acta Physica Sinica, 2014, 63(24): 248102.doi:10.7498/aps.63.248102 |
[6] |
Han Ying, Zhou Gui-Yao, Xia Chang-Ming, Hou Zhi-Yun, Hou Lan-Tian.Investigation on the fabrication and luminescence characteristics of Yb3+ and Al3+ Co-doped silicate glasses. Acta Physica Sinica, 2011, 60(5): 054212.doi:10.7498/aps.60.054212 |
[7] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men.Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103.doi:10.7498/aps.60.017103 |
[8] |
Ma Ming-Xing, Zhu Da-Chuan, Tu Ming-Jing.The effect of Eu2+ doping concentration on luminescence properties of BaAl2Si2O8:Eu2+ blue phosphor. Acta Physica Sinica, 2009, 58(8): 5826-5830.doi:10.7498/aps.58.5826 |
[9] |
Li Pan-Lai, Wang Zhi-Jun, Wang Ying, Yang Zhi-Ping, Guo Qing-Lin, Li Xu, Yang Yan-Min, Fu Guang-Sheng.Luminescence characteristics and crystallographic sites of Ce3+ in LiBaBO3. Acta Physica Sinica, 2009, 58(8): 5831-5835.doi:10.7498/aps.58.5831 |
[10] |
Ma Ming-Xing, Zhu Da-Chuan, Tu Ming-Jing.Effect of H3BO3 on composition and luminescence properties of BaAl2Si2O8:Eu2+ blue phosphor. Acta Physica Sinica, 2009, 58(9): 6512-6517.doi:10.7498/aps.58.6512 |
[11] |
Zhou Jun, Fang Qing-Qing, Wang Bao-Ming, Liu Yan-Mei, Li Mao, Yan Fang-Liang, Wang Sheng-Nan.Effect of annealing and Mg content on the microstructure and optical properties of Zn1-xMgxO films. Acta Physica Sinica, 2008, 57(10): 6614-6619.doi:10.7498/aps.57.6614 |
[12] |
Wang Zhi-Jun, Li Pan-Lai, Wang Gang, Yang Zhi-Ping, Guo Qing-Lin.Preparation and luminescence characteristics of Ca2SiO4:Dy3+ phosphor. Acta Physica Sinica, 2008, 57(7): 4575-4579.doi:10.7498/aps.57.4575 |
[13] |
Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
[14] |
Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan.The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica, 2005, 54(1): 416-421.doi:10.7498/aps.54.416 |
[15] |
Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
[16] |
Shu Bin, Dai Xian-Ying, Zhang He-Ming.Determination of bandgap in SiGe strained layers using a pn heterojunction C-V. Acta Physica Sinica, 2004, 53(1): 235-238.doi:10.7498/aps.53.235 |
[17] |
Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
[18] |
Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin.. Acta Physica Sinica, 2002, 51(2): 304-309.doi:10.7498/aps.51.304 |
[19] |
Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |
[20] |
Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |