[1] |
Zhang Sheng-Yuan, Xia Kang-Long, Zhang Mao-Lin, Bian Ang, Liu Zeng, Guo Yu-Feng, Tang Wei-Hua.Self-powered dual-mode UV detector based on GaN/(BA)2PbI4heterojunction. Acta Physica Sinica, 2024, 73(6): 067301.doi:10.7498/aps.73.20231698 |
[2] |
Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica, 2023, 72(17): 178501.doi:10.7498/aps.72.20230709 |
[3] |
Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica, 2023, 72(19): 198501.doi:10.7498/aps.72.20230553 |
[4] |
Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
[5] |
Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li.A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501.doi:10.7498/aps.71.20220879 |
[6] |
Song Jian-Jun, Zhang Long-Qiang, Chen Lei, Zhou Liang, Sun Lei, Lan Jun-Feng, Xi Chu-Hao, Li Jia-Hao.A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology. Acta Physica Sinica, 2021, 70(10): 108401.doi:10.7498/aps.70.20201674 |
[7] |
.Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211536 |
[8] |
Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong.Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102.doi:10.7498/aps.70.20200921 |
[9] |
Li Yu-Chen, Chen Hang-Yu, Song Jian-Jun.Ge Schottky diode for improving energy conversion efficiency of the receiver of microwave wireless power transfer. Acta Physica Sinica, 2020, 69(10): 108401.doi:10.7498/aps.69.20191415 |
[10] |
Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
[11] |
Liu Yu-Dong, Du Lei, Sun Peng, Chen Wen-Hao.The effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes. Acta Physica Sinica, 2012, 61(13): 137203.doi:10.7498/aps.61.137203 |
[12] |
Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men.Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103.doi:10.7498/aps.60.017103 |
[13] |
Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men.Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808.doi:10.7498/aps.60.037808 |
[14] |
Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu.Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653.doi:10.7498/aps.57.6649 |
[15] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
[16] |
Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping.Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923.doi:10.7498/aps.54.2918 |
[17] |
Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
[18] |
Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin.. Acta Physica Sinica, 2002, 51(2): 304-309.doi:10.7498/aps.51.304 |
[19] |
Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming.. Acta Physica Sinica, 2002, 51(1): 148-152.doi:10.7498/aps.51.148 |
[20] |
Xu Chang-Fa, Yang Yin-Tang, Liu Li.. Acta Physica Sinica, 2002, 51(5): 1113-1117.doi:10.7498/aps.51.1113 |