[1] |
Lü Ling, Xing Mu-Han, Xue Bo-Rui, Cao Yan-Rong, Hu Pei-Pei, Zheng Xue-Feng, Ma Xiao-Hua, Hao Yue.Effect of heavy ion radiation on low frequency noise characteristics of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2024, 73(3): 036103.doi:10.7498/aps.73.20221360 |
[2] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[3] |
Wu Peng, Zhu Hong-Yu, Wu Jin-Xing, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Low leakage current and high breakdown voltage of AlGaN/GaN Schottky barrier diodes with wet-etching groove anode. Acta Physica Sinica, 2023, 72(17): 178501.doi:10.7498/aps.72.20230709 |
[4] |
Wu Peng, Li Ruo-Han, Zhang Tao, Zhang Jin-Cheng, Hao Yue.Interface-state suppression of AlGaN/GaN Schottky barrier diodes with post-anode-annealing treatment. Acta Physica Sinica, 2023, 72(19): 198501.doi:10.7498/aps.72.20230553 |
[5] |
Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
[6] |
Song Jian-Jun, Zhang Long-Qiang, Chen Lei, Zhou Liang, Sun Lei, Lan Jun-Feng, Xi Chu-Hao, Li Jia-Hao.A Ge-based Schottky diode for 2.45 G weak energy microwave wireless energy transmission based on crystal orientation optimization and Sn alloying technology. Acta Physica Sinica, 2021, 70(10): 108401.doi:10.7498/aps.70.20201674 |
[7] |
.Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211536 |
[8] |
Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao.Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica, 2021, 70(16): 168501.doi:10.7498/aps.70.20210368 |
[9] |
Yan Da-Wei, Tian Kui-Kui, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Li Jin-Xiao, Cao Yan-Rong, Gu Xiao-Feng.Forward current transport and noise behavior of GaN Schottky diodes. Acta Physica Sinica, 2021, 70(8): 087201.doi:10.7498/aps.70.20201467 |
[10] |
Li Yu-Chen, Chen Hang-Yu, Song Jian-Jun.Ge Schottky diode for improving energy conversion efficiency of the receiver of microwave wireless power transfer. Acta Physica Sinica, 2020, 69(10): 108401.doi:10.7498/aps.69.20191415 |
[11] |
Ma Qun-Gang, Wang Hai-Hong, Zhang Sheng-Dong, Chen Xu, Wang Ting-Ting.Electro-static discharge protection analysis and design optimization of interlayer Cu interconnection in InGaZnO thin film transistor backplane. Acta Physica Sinica, 2019, 68(15): 158501.doi:10.7498/aps.68.20190646 |
[12] |
Wang Dang-Hui, Xu Tian-Han.Low-frequency generation-recombination noise behaviors of blue/violet-light-emitting diode. Acta Physica Sinica, 2019, 68(12): 128104.doi:10.7498/aps.68.20190189 |
[13] |
Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
[14] |
Wang Jing, Liu Yuan, Liu Yu-Rong, Wu Wei-Jing, Luo Xin-Yue, Liu Kai, Li Bin, En Yun-Fei.Extraction of density of localized states in indium zinc oxide thin film transistor. Acta Physica Sinica, 2016, 65(12): 128501.doi:10.7498/aps.65.128501 |
[15] |
Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
[16] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen.Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica, 2015, 64(5): 050701.doi:10.7498/aps.64.050701 |
[17] |
Zhai Dong-Yuan, Zhao Yi, Cai Yin-Fei, Shi Yi, Zheng You-Dou.Effect of the trench shape on the electrical properties of silicon based trench barrier schottky diode. Acta Physica Sinica, 2014, 63(12): 127201.doi:10.7498/aps.63.127201 |
[18] |
Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong.Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica, 2014, 63(9): 098503.doi:10.7498/aps.63.098503 |
[19] |
Yang Li-Xia, Du Lei, Bao Jun-Lin, Zhuang Yi-Qi, Chen Xiao-Dong, Li Qun-Wei, Zhang Ying, Zhao Zhi-Gang, He Liang.The effect of 60Co γ-ray irradiation on the 1/f noise of Schottky barrier diodes. Acta Physica Sinica, 2008, 57(9): 5869-5874.doi:10.7498/aps.57.5869 |
[20] |
Huang Yang-Cheng, Liu Da-Fu, Liang Jin-Sui, Gong Hai-Mei.Low frequency noise study on short wavelength HgCdTe photodiodes. Acta Physica Sinica, 2005, 54(5): 2261-2266.doi:10.7498/aps.54.2261 |