| [1] |
Xin Yan-Hui, Liu Hong-Xia, Wang Shu-Long, Fan Xiao-Jiao.Two-dimensional analytical models for the symmetrical triple-material double-gate strained Si MOSFETs. Acta Physica Sinica, 2014, 63(14): 148502.doi:10.7498/aps.63.148502 |
| [2] |
Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Li Yu-Chen.Analytical modeling for drain current of strained Si NMOSFET. Acta Physica Sinica, 2013, 62(23): 237103.doi:10.7498/aps.62.237103 |
| [3] |
Tian Yuan-Ye, Guo Fu-Ming, Yang Yu-Jun.The effect of atomic potential on the above threshold ionization. Acta Physica Sinica, 2013, 62(7): 073202.doi:10.7498/aps.62.073202 |
| [4] |
Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing.Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica, 2013, 62(15): 158502.doi:10.7498/aps.62.158502 |
| [5] |
Chen Hai-Feng.Characteristics of gate-modulated generation current under the reverse substrate bias in nano-nMOSFET. Acta Physica Sinica, 2013, 62(18): 188503.doi:10.7498/aps.62.188503 |
| [6] |
Wang Bin, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Song Jian-Jun, Zhou Chun-Yu, Li Yu-Chen.Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate. Acta Physica Sinica, 2013, 62(21): 218502.doi:10.7498/aps.62.218502 |
| [7] |
Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
| [8] |
Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
| [9] |
Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng.Study on power characteristics of deep sub-micron SOI RF LDMOS. Acta Physica Sinica, 2011, 60(1): 018501.doi:10.7498/aps.60.018501 |
| [10] |
Qu Jiang-Tao, Wang Xiao-Yan, Zhang He-Ming, Wang Guan-Yu, Song Jian-Jun, Qin Shan-Shan.Drain-induced barrier-lowering effects on threshold voltage in short-channel strained Si metal-oxide semiconductor field transistor. Acta Physica Sinica, 2011, 60(2): 027102.doi:10.7498/aps.60.027102 |
| [11] |
Wu Hua-Ying, Zhang He-Ming, Song Jian-Jun, Hu Hui-Yong.An model of tunneling gate current for uniaxially strained Si nMOSFET. Acta Physica Sinica, 2011, 60(9): 097302.doi:10.7498/aps.60.097302 |
| [12] |
Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong.Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305.doi:10.7498/aps.60.027305 |
| [13] |
Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo.Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica, 2010, 59(11): 8131-8136.doi:10.7498/aps.59.8131 |
| [14] |
Liu Hong-Xia, Yin Xiang-Kun, Liu Bing-Jie, Hao Yue.Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor. Acta Physica Sinica, 2010, 59(12): 8877-8882.doi:10.7498/aps.59.8877 |
| [15] |
Zhang Zhi-Feng, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Song Jian-Jun.Threshold voltage model of strained Si channel nMOSFET. Acta Physica Sinica, 2009, 58(7): 4948-4952.doi:10.7498/aps.58.4948 |
| [16] |
Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
| [17] |
Zhang Kai-Xiao, Chen Dun-Jun, Shen Bo, Tao Ya-Qi, Wu Xiao-Shan, Xu Jin, Zhang Rong, Zheng You-Dou.The effects of passivation and temperature on the barrier strain of Al0.22Ga0.78N/GaN heterostructures. Acta Physica Sinica, 2006, 55(3): 1402-1406.doi:10.7498/aps.55.1402 |
| [18] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E.An analytical model of MOSFET threshold voltage with considiring the quantum effects. Acta Physica Sinica, 2005, 54(2): 897-901.doi:10.7498/aps.54.897 |
| [19] |
PAN BI-CAI.TIGHT-BINDING POTENTIAL WITH CORRECTION OF BONDING ENVIRONMENT FOR SILICON-HYDROGEN. Acta Physica Sinica, 2001, 50(2): 268-272.doi:10.7498/aps.50.268 |
| [20] |
HAO YUE, ZHU JIAN-GANG, GUO LIN, ZHANG ZHENG-FAN.. Acta Physica Sinica, 2001, 50(1): 120-125.doi:10.7498/aps.50.120 |
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