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Abstract

A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of “gate engineering” and “strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.

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1.
Funds:Project supported by the NLAIC Research Fund (Grant No. P140c090303110c0904), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. JY0300122503), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004).

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Vol. 62, Issue 21 - 2013-11-05

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