[1] |
Li Fen-Fei, Zhou Xiao-Yan, Zhang Kui-Bao, Shi Zhao-Hua, Chen Jin-Zhan, Ye Xin, Wu Wei-Dong, Li Bo.Effects of neutron irradiation on optical characteristics of Yb-doped fiber materials. Acta Physica Sinica, 2021, 70(19): 190201.doi:10.7498/aps.70.20210083 |
[2] |
Liu Liang, Han De-Zhuan, Shi Lei.Plasmonic band structures and its applications. Acta Physica Sinica, 2020, 69(15): 157301.doi:10.7498/aps.69.20200193 |
[3] |
Wang Cheng-Long, Wang Qing-Yu, Zhang Yue, Li Zhong-Yu, Hong Bing, Su Zhe, Dong Liang.Molecular dynamics study of cascade damage at SiC/C interface. Acta Physica Sinica, 2014, 63(15): 153402.doi:10.7498/aps.63.153402 |
[4] |
Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin.Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica, 2014, 63(11): 118501.doi:10.7498/aps.63.118501 |
[5] |
Zhang Ming-Lan, Yang Rui-Xia, Li Zhuo-Xin, Cao Xing-Zhong, Wang Bao-Yi, Wang Xiao-Hui.Study on proton irradiation induced defects in GaN thick film. Acta Physica Sinica, 2013, 62(11): 117103.doi:10.7498/aps.62.117103 |
[6] |
Sheng Yu-Bang, Yang Lü-Yun, Luan Huai-Xun, Liu Zi-Jun, Li Jin-Yan, Dai Neng-Li.Gamma radiation effects on absorption and emission properties of erbium-doped silicate glasses. Acta Physica Sinica, 2012, 61(11): 116301.doi:10.7498/aps.61.116301 |
[7] |
Wu Mu-Sheng, Xu Bo, Liu Gang, Ouyang Chu-Ying.The effect of strain on band structure of single-layer MoS2: an ab initio study. Acta Physica Sinica, 2012, 61(22): 227102.doi:10.7498/aps.61.227102 |
[8] |
Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo.Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2012, 61(23): 238502.doi:10.7498/aps.61.238502 |
[9] |
Zhang Dong, Lu Xi-Rui, Yang Yan-Kai, Cui Chun-Long, Chen Meng-Jun.Capability of resisting γ-ray irradiation and Rietveld structurerefinement of zircon. Acta Physica Sinica, 2011, 60(7): 078901.doi:10.7498/aps.60.078901 |
[10] |
Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong.Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(11): 118501.doi:10.7498/aps.60.118501 |
[11] |
Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li.A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica, 2011, 60(7): 078502.doi:10.7498/aps.60.078502 |
[12] |
Xiao Zhi-Qiang, Li Lei-Lei, Zhang Bo, Xu Jing, Chen Zheng-Cai.Total dose characteristics of single poly EEPROM and SONOS EEPROM on SOI. Acta Physica Sinica, 2011, 60(2): 028502.doi:10.7498/aps.60.028502 |
[13] |
Yu Jun, Zhou Peng, Zhao Heng-Yu, Wu Feng, Xia Hai-Ping, Su Liang-Bi, Xu Jun.Study on near-infrared broadband emission spectroscopic properties of Bi-doped α-BaB2O4 single crystal induced by γ-irradiation. Acta Physica Sinica, 2010, 59(5): 3538-3541.doi:10.7498/aps.59.3538 |
[14] |
Chen Jian, Li Xiao-Li, Li Hai-Hua, Wang Qing-Kang.Research of LED light extraction efficiency of photonic crystal with square and hexagonal lattice. Acta Physica Sinica, 2009, 58(9): 6216-6221.doi:10.7498/aps.58.6216 |
[15] |
Zhong Lan-Hua, Wu Fu-Gen.Propagation of water wave over a periodically perforated bottom and the band structure. Acta Physica Sinica, 2009, 58(9): 6363-6368.doi:10.7498/aps.58.6363 |
[16] |
Peng Shao-Quan, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, He Liang, Chen Wei-Hua.Radiation degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise. Acta Physica Sinica, 2008, 57(8): 5205-5211.doi:10.7498/aps.57.5205 |
[17] |
Wang Tong-Biao, Liu Nian-Hua.Band structures and electric fields of one-dimensional photonic crystals composed of alternate layers of left-handed and right-handed materials. Acta Physica Sinica, 2007, 56(10): 5878-5882.doi:10.7498/aps.56.5878 |
[18] |
Qiao Ming, Zhang Bo, Li Zhao-Ji, Fang Jian, Zhou Xian-Da.Analysis of the back-gate effect on the breakdown behavior of lateral high-voltage SOI transistors. Acta Physica Sinica, 2007, 56(7): 3990-3995.doi:10.7498/aps.56.3990 |
[19] |
Zheng Zhong-Shan, Liu Zhong-Li, Zhang Guo-Qiang, Li Ning, Fan Kai, Zhang En-Xia, Yi Wan-Bing, Chen Meng, Wang Xi.Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET. Acta Physica Sinica, 2005, 54(1): 348-353.doi:10.7498/aps.54.348 |
[20] |
Zhang Ke-Yan.Phase transition speed research of metal material at laser irradiation medium strength. Acta Physica Sinica, 2004, 53(6): 1815-1819.doi:10.7498/aps.53.1815 |